公开(公告)号：US20030143775A1

公开(公告)日：2003-07-31

申请号：US10057368

申请日：2002-01-25

Applicant: Sony Corporation and Sony Electronics Inc.

Inventor： Frederick T. Brady

IPC: H01L021/44 ,  H01L021/48 ,  H01L021/50 ,  H01L021/30 ,  H01L021/46

CPC classification number: B81B7/007 ,  H01L21/50

Abstract: A wafer-level packaging process for MEMS applications, and a MEMS package produced thereby, in which a SOI wafer is bonded to a MEMS wafer and the electrical feed-throughs are made through the SOI wafer. The method includes providing a first substrate having the functional element thereon connected to at least one metal lead, and providing a second SOI substrate having a recessed cavity in a silicon portion thereof with metal connectors formed in the recessed cavity. The non-recessed surfaces of the SOI substrate are bonded to the first substrate to form a hermetically sealed cavity. Within the cavity, the metal leads are bonded to respective metal connectors. Prior to bonding, the recessed cavity has a depth that is greater than the thickness of the functional element and less than the combined thickness of the metal leads and their respective metal connectors. After bonding, silicon from the SOI substrate is removed to expose the buried oxide portion of the SOI substrate. Metal pads are then formed through the SOI substrate to the metal connectors within the cavity. Wire bond pads are thereby connected to the functional element without opening the cavity to the environment. Electrical signals may then be fed through the SOI wafer to the metal connectors, metal leads and the functional element.

Abstract translation: 用于MEMS应用的晶片级封装工艺，以及由此制造的MEMS封装，其中将SOI晶片结合到MEMS晶片并且通过SOI晶片制造电馈通。 该方法包括提供其上连接有至少一个金属引线的功能元件的第一衬底，以及在其硅部分中提供具有形成在凹腔中的金属连接器的凹腔的第二SOI衬底。 SOI衬底的非凹入表面结合到第一衬底以形成气密密封腔。 在空腔内，金属引线被连接到相应的金属连接器上。 在接合之前，凹腔的深度大于功能元件的厚度，并且小于金属引线及其各自的金属连接器的组合厚度。 在接合之后，去除来自SOI衬底的硅以露出SOI衬底的掩埋氧化物部分。 然后，通过SOI衬底将金属焊盘形成到腔内的金属连接器。 因此，引线接合垫连接到功能元件，而不会将空腔打开到环境中。 然后，电信号可以通过SOI晶片馈送到金属连接器，金属引线和功能元件。