摘要:
A method of forming a plurality of bumps over a wafer mainly comprises the steps of providing a wafer having a plurality of bonding pads, forming an adhesive layer on the surface of the wafer to cover the bonding pads, patterning the adhesive layer to expose the bonding pads to form a patterned adhesive layer, forming a barrier layer and a wetting layer on the patterned adhesive layer and the surface of the wafer, removing the barrier layer and the wetting layer not covering the patterned adhesive layer, forming a plurality of bumps on the patterned wetting layer, and reflowing the bumps.
摘要:
A parasitic capacitance-preventing dummy solder bump structure on a substrate has at least one conductive layer formed on the substrate, a dielectric layer employed to cover the conductive layer, an under bump metallurgy layer (UBM layer) formed on the dielectric layer, and a solder bump formed on the UBM layer.
摘要:
The specification discloses an apparatus comprising a die mounted on a substrate, the die being connected to the substrate by a plurality of wires, and a mold cap encapsulating the die and the plurality of wires, the mold cap comprising an electrically insulating portion encapsulating the wires and at least a portion of the die and a thermally conductive portion overmolded on the die and the electrically insulating portion. Also disclosed is a process comprising providing a die connected to a substrate by a plurality of wires, encapsulating the wires and at least a portion of the die in an electrically insulating material, and encapsulating the die, the wires and the electrically insulating material in a thermally conductive material. Other embodiments are disclosed and claimed.
摘要:
A microelectronic package is disclosed including a microelectronic device, a substrate, and a signaling path coupling the microelectronic device with the substrate. The signaling path includes a conductive material, a solder joint, and a barrier material disposed between the conductive material and the solder joint. The barrier material may include nickel, cobalt, iron, titanium, and combinations thereof.
摘要:
A first adhesive member is adhered to a substrate formed with a circuit. After that, the substrate adhered with the first adhesive member is separated into a plurality of chips. Subsequently, an adhesion of a portion of the first adhesive member where desired chips are adhered is decreased, and the desired chips are selectively removed from the first adhesive member.
摘要:
The present invention provides a method for inspecting a connecting surface of a flip chip to solve problems that the grinding, polishing and chemical etching method is used for making a sample. The present invention utilizes ion beam etching technology for making and processing a sample of the flip chip (FC). The ion beam etching technology includes two modes: keeping the energy of ion beam and increasing the etching time; and keeping the etching time and increasing the ion beam energy. The ion beam etching technology can remove a deforming portion between the solder ball and the metal pad, which is connected thereto because of the grinding and polishing. Specially, it is easy to analyse a sample of a scanning electron microscope (SEM) which includes an intermetallic compound formed between the solder ball and the metal pad connected thereto.
摘要:
A flip chip having solder bumps and an underfill that is thermoplastic and fluxing, as well as methods for making such a device. The resulting device is well suited for a simple one-step application to a printed circuit board, thereby simplifying flip chip manufacturing processes.
摘要:
A semiconductor device includes a film substrate having an interconnection pattern provided on a surface thereof, a semiconductor chip mounted on the film substrate and having an electrode provided on a surface thereof, and an insulative resin portion provided between the film substrate and the semiconductor chip, the resin portion having been formed by applying an insulative resin on at least one of the film substrate and the semiconductor chip and filling a space defined between the film substrate and the semiconductor chip with the resin when the semiconductor chip is mounted on the film substrate, wherein the interconnection pattern has a projection which has a sectional shape tapered toward the electrode of the semiconductor chip and intrudes in the electrode thereby to be electrically connected to the electrode.
摘要:
To provide a method of manufacturing an electronic part capable of reusing the remaining conductive particles and electrically connecting the electronic part to the counterpart substrate, a method of manufacturing an electronic part includes: forming a mask on an active surface of the wafer on which electrode pads of the electronic part are formed, the mask of a predetermined height having openings provided above the electrode pads, forming bumps inside of the openings of the mask provided above the electrode pads, the bumps having a height lower than that of the mask, scattering conductive particles above the active surface of the wafer, removing the conductive particles remaining on the surface of the mask, fixing the conductive particles on the surfaces of the bumps, removing the mask, and separating the electronic part from the wafer.
摘要:
A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom.