公开(公告)号：US09724666B1

公开(公告)日：2017-08-08

申请号：US13656615

申请日：2012-10-19

Applicant: Soraa, Inc.

Inventor： Pakalapati Tirumala Rajeev ,  Douglas W. Pocius ,  Mark P. D'Evelyn

IPC: B01J19/06 ,  C30B7/10 ,  C30B35/00

CPC classification number: B01J19/06 ,  A61B6/12 ,  A61M25/00 ,  A61M25/0105 ,  A61M25/0113 ,  A61M25/09 ,  A61M25/09041 ,  A61M25/0905 ,  A61M2025/09133 ,  C30B7/10 ,  C30B35/00

Abstract: An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.