公开(公告)号：US20070099404A1

公开(公告)日：2007-05-03

申请号：US11261843

申请日：2005-10-28

申请人： Sridhar Govindaraju ,  Jack Hwang ,  Seok-Hee Lee ,  Patrick Keys ,  Chad Lindfors

发明人： Sridhar Govindaraju ,  Jack Hwang ,  Seok-Hee Lee ,  Patrick Keys ,  Chad Lindfors

IPC分类号： H01L21/265 ,  H01L21/4763

CPC分类号： H01L21/26506 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for improving a microelectronic device interface with an ultra-fast anneal process at an intermediate temperature that may be lower than those used in a dopant activation process. In one embodiment, a partial recrystalization of an amorphous silicon layer in the source drain region that is the precursor to the metal salicide reaction is disclosed. Source/drain regions are first amorphized using an implant process, then a metal layer is deposited in the source/drain region which reacts with the silicon in a salicide formation anneal. Amorphization reduces problems with metal diffusion that can occur during salicide formation anneal process, which typically occurs at a temperature significantly lower than the dopant activation temperature. The partial recrystalization reduces source/drain interfacial roughness, repairs amorphization-related defects, and reactivates dopants previously deactivated during the amorphization implant, thereby reducing the external resistance and leakage, as well as improving mobility and yield.

摘要翻译： 一种在中间温度下用超快速退火工艺改进微电子器件界面的方法，该中间温度可低于掺杂剂激活过程中使用的那些。 在一个实施例中，公开了作为金属硅化物反应的前体的源极漏极区域中的非晶硅层的部分重结晶。 源极/漏极区域首先使用注入工艺非晶化，然后金属层沉积在源极/漏极区域中，其在硅化物形成退火中与硅反应。 非晶化减少了在自杀化合物形成退火过程中可能发生的金属扩散的问题，其通常发生在显着低于掺杂剂活化温度的温度下。 部分重结晶减少了源极/漏极界面粗糙度，修复了非晶化相关缺陷，并且在非晶化植入期间重新激化先前已去活化的掺杂剂，从而降低了外部电阻和漏电流，同时提高了迁移率和产率。