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公开(公告)号:US20070278547A1
公开(公告)日:2007-12-06
申请号:US11444089
申请日:2006-05-31
申请人: Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人: Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号: H01L29/94
CPC分类号: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译: MRAM位(10)包括自由磁区(15),包括反铁磁材料的固定磁区(17)和隧道势垒(16),其包括位于自由磁区(15)和固定 磁区(17)。 MRAM位(10)通过使用高H H k(单轴各向异性)的组合,包括表现出明确定义的高电平触发器的固定磁场来避免钉扎层, 高饱和场(饱和磁场),理想的软磁特性表现出明确的容易和硬轴。
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公开(公告)号:US08497538B2
公开(公告)日:2013-07-30
申请号:US11444089
申请日:2006-05-31
申请人: Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人: Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号: H01L29/94
CPC分类号: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译: MRAM位(10)包括自由磁区(15),包括反铁磁材料的固定磁区(17)和隧道势垒(16),其包括位于自由磁区(15)和固定 磁区(17)。 MRAM位(10)通过使用高Hk(单轴各向异性),高Hsat(饱和磁场)和显示明确定义的理想软磁性质的组合,包括表现出明确的高Hflop的固定磁区,避免了钉扎层 容易和坚硬的轴。
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公开(公告)号:US06956763B2
公开(公告)日:2005-10-18
申请号:US10609288
申请日:2003-06-27
IPC分类号: G11C11/155 , G11C11/00
CPC分类号: G11C11/155
摘要: A direct write is provided for a magnetoelectronics information device that includes producing a first magnetic field with a first field magnitude in proximity to the magnetoelectronics information device at a first time (t1). Once this first magnetic field with the first magnitude is produced, a second magnetic field with a second field magnitude is produced in proximity to the magnetoelectronics information device at a second time (t2). The first magnetic field is adjusted to provide a third magnitude at a third time (t3) that is less than the first field magnitude and greater than zero, and the second magnetic field is adjusted to provide a fourth field magnitude at a fourth time (t4) that is less than the second field magnitude. This direct write is used in conjunction with other direct writes and also in combination with toggle writes to write the MRAM element without an initial read.
摘要翻译: 提供了一种用于磁电子信息设备的直接写入,其包括在第一时间(t 1> 1)处产生具有接近磁电子信息器件的第一场强的第一磁场。 一旦产生具有第一幅度的第一磁场,则在第二时间(t 2> 2)处产生具有第二磁场强度的第二磁场,靠近磁电子信息装置。 第一磁场被调整以在小于第一场幅度并大于零的第三时间(t 3/3)处提供第三幅度,并且调整第二磁场以提供第四磁场 小于第二场强的第四时间(t> 4 sub>)的场强。 这种直接写入与其他直接写入一起使用,并且与切换写入组合使用以写入MRAM元素而不进行初始读取。
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