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    Synthetic antiferromagnet structures for use in MTJs in MRAM technology
    4.
    发明授权
    Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
    在MRAM技术中用于MTJ的合成反铁磁体结构

    公开(公告)号：US07226796B2

    公开(公告)日：2007-06-05

    申请号：US11182149

    申请日：2005-07-15

    申请人： Srinivas V. Pietambaram ,  Renu W. Dave ,  Jon M. Slaughter ,  Jijun Sun

    发明人： Srinivas V. Pietambaram ,  Renu W. Dave ,  Jon M. Slaughter ,  Jijun Sun

    IPC分类号： H01L21/00 ,  H01L29/76

    CPC分类号： G11C11/16 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

    摘要翻译： 在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。 该SAF由被耦合层隔开的两个铁磁层组成。 耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。 优选的基材是钌，优选的其它材料是钽。 进一步提高这些优点，在​​钽和铁磁层之一的界面处加入钴铁。 此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。 耦合层本身也可以是合金。

    Synthetic antiferromagnet structures for use in MTJs in MRAM technology
    5.
    发明授权
    Synthetic antiferromagnet structures for use in MTJs in MRAM technology 有权
    在MRAM技术中用于MTJ的合成反铁磁体结构

    公开(公告)号：US06946697B2

    公开(公告)日：2005-09-20

    申请号：US10740338

    申请日：2003-12-18

    申请人： Srinivas V. Pietambaram ,  Renu W. Dave ,  Jon M. Slaughter ,  Jijun Sun

    发明人： Srinivas V. Pietambaram ,  Renu W. Dave ,  Jon M. Slaughter ,  Jijun Sun

    IPC分类号： G11C11/16 ,  H01L29/76 ,  H01L31/113 ,  H01L43/08

    CPC分类号： G11C11/16 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

    摘要翻译： 在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。 该SAF由两个被耦合层隔开的铁磁层组成。 耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。 优选的基材是钌，优选的其它材料是钽。 进一步提高这些优点，在​​钽和铁磁层之一的界面处加入钴铁。 此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。 耦合层本身也可以是合金。

    Amorphous alloys for magnetic devices
    6.
    发明授权
    Amorphous alloys for magnetic devices 有权
    用于磁性器件的无定形合金

    公开(公告)号：US06831312B2

    公开(公告)日：2004-12-14

    申请号：US10232164

    申请日：2002-08-30

    申请人： Jon M. Slaughter ,  Renu W. Dave ,  Srinivas V. Pietambaram

    发明人： Jon M. Slaughter ,  Renu W. Dave ,  Srinivas V. Pietambaram

    IPC分类号： H01L31119

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10 ,  Y10T428/12431

    摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.

    摘要翻译： 公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。 在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。 此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

    Magnetic tunnel junction structure and method
    8.
    发明申请
    Magnetic tunnel junction structure and method 失效
    磁隧道结结构及方法

    公开(公告)号：US20080113220A1

    公开(公告)日：2008-05-15

    申请号：US11601129

    申请日：2006-11-15

    申请人： Jijun Sun ,  Renu W. Dave ,  Jason A. Janesky ,  Jon M. Slaughter

    发明人： Jijun Sun ,  Renu W. Dave ,  Jason A. Janesky ,  Jon M. Slaughter

    IPC分类号： G11B5/33 ,  B05D5/12

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08

    摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.

    摘要翻译： 提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中， 磁致伸缩适于补偿第一FM层（30）的磁致伸缩。 即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。 获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。 对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

    Magnetic tunnel junction structure and method
    9.
    发明授权
    Magnetic tunnel junction structure and method 失效
    磁隧道结结构及方法

    公开(公告)号：US07572645B2

    公开(公告)日：2009-08-11

    申请号：US11601129

    申请日：2006-11-15

    申请人： Jijun Sun ,  Renu W. Dave ,  Jason A. Janesky ,  Jon M. Slaughter

    发明人： Jijun Sun ,  Renu W. Dave ,  Jason A. Janesky ,  Jon M. Slaughter

    IPC分类号： H01L29/76

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08

    摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.

    摘要翻译： 提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中， 磁致伸缩适于补偿第一FM层（30）的磁致伸缩。 即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。 获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。 对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

    Reduced power magnetoresistive random access memory elements
    10.
    发明授权
    Reduced power magnetoresistive random access memory elements 有权

    公开(公告)号：US07129098B2

    公开(公告)日：2006-10-31

    申请号：US10997118

    申请日：2004-11-24

    申请人： Nicholas D. Rizzo ,  Renu W. Dave ,  Bradley N. Engel ,  Jason A. Janesky ,  JiJun Sun

    发明人： Nicholas D. Rizzo ,  Renu W. Dave ,  Bradley N. Engel ,  Jason A. Janesky ,  JiJun Sun

    IPC分类号： H01L21/00

    CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/08

    摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.