公开(公告)号：US20110055985A1

公开(公告)日：2011-03-03

申请号：US12747617

申请日：2008-12-10

申请人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

发明人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

IPC分类号： G01Q60/24 ,  G01J3/44 ,  G01B11/30

CPC分类号： G01Q60/06 ,  G01Q10/045 ,  G01Q20/04 ,  G01Q30/02

摘要： The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

摘要翻译： 本发明涉及一种用于研究和/或修饰表面性质的原子力显微镜（AFM）装置。 该装置包括具有集成的压阻传感器的悬臂（柔性条），集成双模致动器和测量尖端。 测量头带有至少两个金属电极，可通过电气端子激活。 测量头和/或悬臂具有至少一个纳米孔，同步加速器辐射或激光通过该孔被引导到待研究的材料表面上。 此外，本发明涉及一种用于研究和改进表面性质和表面近端性质的方法，其可以使用这种装置来执行。 为此，依次执行原子力显微镜（AFM），表面增强拉曼散射（SERS），光发射光谱（XPS，XAS）和局部曝光的材料修饰，或同时使用相同的器件。

公开(公告)号：US08479311B2

公开(公告)日：2013-07-02

申请号：US12747617

申请日：2008-12-10

申请人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

发明人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

IPC分类号： G01Q60/24

CPC分类号： G01Q60/06 ,  G01Q10/045 ,  G01Q20/04 ,  G01Q30/02

摘要： The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

摘要翻译： 本发明涉及一种用于研究和/或修饰表面性质的原子力显微镜（AFM）装置。 该装置包括具有集成的压阻传感器的悬臂（柔性条），集成双模致动器和测量尖端。 测量头带有至少两个金属电极，可通过电气端子激活。 测量头和/或悬臂具有至少一个纳米孔，同步加速器辐射或激光通过该孔被引导到待研究的材料表面上。 此外，本发明涉及一种用于研究和改进表面性质和表面近端性质的方法，其可以使用这种装置来执行。 为此，依次执行原子力显微镜（AFM），表面增强拉曼散射（SERS），光发射光谱（XPS，XAS）和局部曝光的材料修饰，或同时使用相同的器件。

公开(公告)号：US08546264B2

公开(公告)日：2013-10-01

申请号：US11421958

申请日：2006-06-02

申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30655

摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制通过仔细控制氟化物存在与慢化剂气体如CH4，并使用CF2源控制钝化速率和化学计量来实现。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。

公开(公告)号：US20110217655A1

公开(公告)日：2011-09-08

申请号：US13039139

申请日：2011-03-02

申请人： Deirdre Olynick ,  P. James Schuck ,  Martin Schmidt

发明人： Deirdre Olynick ,  P. James Schuck ,  Martin Schmidt

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/004 ,  G03F7/20

摘要： A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

摘要翻译： 描述了曝光光刻胶的干燥显影的新方法，其中将光致抗蚀剂层暴露于可见光源以去除曝光区域中的抗蚀剂。 在光源的影响下用作抗蚀剂材料的化合物的类别经历化学/结构变化，使得改性材料变得易挥发，从而从抗蚀剂表面除去。 曝光过程进行足以将曝光的抗蚀剂层烧蚀到下面的层的时间。 发现在该方法中有用的一组化合物包括芳族杯芳烃。

公开(公告)号：US08512937B2

公开(公告)日：2013-08-20

申请号：US13039139

申请日：2011-03-02

申请人： Deirdre Olynick ,  P. James Schuck ,  Martin Schmidt

发明人： Deirdre Olynick ,  P. James Schuck ,  Martin Schmidt

IPC分类号： G03F7/26

CPC分类号： G03F7/004 ,  G03F7/20

摘要： A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

摘要翻译： 描述了曝光光刻胶的干燥显影的新方法，其中将光致抗蚀剂层暴露于可见光源以去除曝光区域中的抗蚀剂。 在光源的影响下用作抗蚀剂材料的化合物的类别经历化学/结构变化，使得改性材料变得易挥发，从而从抗蚀剂表面除去。 曝光过程进行足以将曝光的抗蚀剂层烧蚀到下面的层的时间。 发现在该方法中有用的一组化合物包括芳族杯芳烃。

公开(公告)号：US20070015371A1

公开(公告)日：2007-01-18

申请号：US11421958

申请日：2006-06-02

申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

IPC分类号： C03C25/68 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/30655

摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制是通过小心地控制氟化物存在与慢化剂气体如CH 4，并使用CF 2 SO 2源控制钝化速率和化学计量来实现的。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。