公开(公告)号：US08164378B2

公开(公告)日：2012-04-24

申请号：US12115825

申请日：2008-05-06

申请人： Stefano Pietri ,  Alfredo Olmos ,  Jehoda Refaeli ,  Jefferson Daniel de Barros Soldera

发明人： Stefano Pietri ,  Alfredo Olmos ,  Jehoda Refaeli ,  Jefferson Daniel de Barros Soldera

IPC分类号： H03K3/01 ,  H03K17/00

CPC分类号： H03K5/2472 ,  G05F3/205 ,  G05F3/24 ,  H03K2217/0018

摘要： A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.

摘要翻译： 一种方法包括接收包括至少第一电压，第二电压和第三电压的一组电压，并且基于该组电压的极限电压来偏置晶体管的阱。 偏置晶体管的阱可以包括基于第一电压和第二电压的比较同时提供第一信号和第二信号，并且选择性地将晶体管的阱耦合到该组电压的极值电压的源 第一信号，第二信号和第三电压。 电子设备包括晶体管和电源切换模块。 功率切换模块包括一组输入，每个输入被配置为接收包括至少第一电压，第二电压和第三电压的一组电压中的对应的一个，并且包括耦合到晶体管的阱的输出 ，所述输出被配置为提供所述一组电压的极限电压。