摘要:
A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.
摘要:
A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.
摘要:
A device having a temperature sensor device is disclosed. The temperature sensor device includes a complementary to absolute temperature (CTAT) module and a reference module. Both the temperature sensor and the reference voltage module provide signals, that vary in a complementary relationship with the variation in temperature. While the signals can be voltages or currents, for purposes of discussion the signals are discussed in terms of voltages herein. The reference module provides a signal that has a relatively small variation with temperature as compared to the variation in a signal provided by the CTAT module. The signals are provided to a comparator, which provides a temperature control signal based on a comparison of the input signals.
摘要:
A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.
摘要:
Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first reference. A second current is sourced from a second current source into the summing node, wherein the second current source is coupled to the first reference through a programmable fuse. A third current is sunk from the summing node with a current sink, wherein the current sink is coupled to a second reference, and wherein a third current limit is greater than a first current limit and less than the sum of the first current limit and the second current limit. A voltage at the summing node is output in response to the first current, the second current, and the third current. The first and second current sources, and the current sink can be current mirrors.
摘要:
Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first reference. A second current is sourced from a second current source into the summing node, wherein the second current source is coupled to the first reference through a programmable fuse. A third current is sunk from the summing node with a current sink, wherein the current sink is coupled to a second reference, and wherein a third current limit is greater than a first current limit and less than the sum of the first current limit and the second current limit. A voltage at the summing node is output in response to the first current, the second current, and the third current. The first and second current sources, and the current sink can be current mirrors.
摘要:
Oscillator devices and methods of operating such oscillator devices are disclosed. The oscillator devices include a current source, and an oscillation module to provide a clock signal. The frequency of the clock signal depends on the relationship between a threshold voltage of a transistor at the oscillation module and the current level provided by the current source. The transistor at the oscillation module is matched to a transistor at the current source so that the frequency of the clock signal is relatively insensitive to changes in device temperature.
摘要:
Oscillator devices and methods of operating such oscillator devices are disclosed. The oscillator devices include a current source, and an oscillation module to provide a clock signal. The frequency of the clock signal depends on the relationship between a threshold voltage of a transistor at the oscillation module and the current level provided by the current source. The transistor at the oscillation module is matched to a transistor at the current source so that the frequency of the clock signal is relatively insensitive to changes in device temperature.
摘要:
A method and apparatus for limiting access to an integrated circuit (IC) upon detection of abnormal conditions is provided. At least one of abnormal voltage detection, abnormal temperature detection, and abnormal clock detection are provided with low power consumption. Both abnormally low and abnormally high parameter values (e.g. abnormally low or high voltage, temperature, or clock frequency) may be detected. Abnormal clock detection may also detect a stopped clock signal, including a clock signal stopped at a low logic level or at a high logic level. Furthermore, abnormal clock detection may detect an abnormal duty cycle of a clock signal. A sampled bandgap reference may be used to provide accurate voltage and current references while consuming a minimal amount of power. Upon detection of an abnormal parameter value, one or more tamper indications may be provided to initiate tampering countermeasures, such as limiting access to the IC.
摘要:
A programmable voltage reference includes a temperature compensated current source and a voltage reference circuit. The temperature compensated current source includes an output configured to provide a reference current. The voltage reference circuit includes an input coupled to the output of the temperature compensated current source and a reference output. The voltage reference circuit includes a self-cascode metal-oxide semiconductor field-effect transistor structure that includes a first device that is diode-connected and operates in a weak inversion saturation region and a second device that operates in a weak inversion triode region. A length of the second device is selectable. The voltage reference circuit is configured to provide a reference voltage on the reference output based on the reference current.