Cr.sup.3+ -doped colquiriite solid state laser material
    1.
    发明授权
    Cr.sup.3+ -doped colquiriite solid state laser material 失效
    Cr3 +掺杂colquiriite固态激光材料

    公开(公告)号:US4811349A

    公开(公告)日:1989-03-07

    申请号:US176014

    申请日:1988-03-31

    IPC分类号: C30B13/00 H01S3/16

    摘要: Chromium doped colquiriite, LiCaAlF.sub.6 :Cr.sup.3+, is useful as a tunable laser crystal that has a high intrinsic slope efficiency, comparable to or exceeding that of alexandrite, the current leading performer of vibronic sideband Cr.sup.3+ lasers. The laser output is tunable from at least 720 nm to 840 nm with a measured slop efficiency of about 60% in a Kr laser pumped laser configuration. The intrinsic slope efficiency (in the limit of large output coupling) may approach the quantum defect limited value of 83%. The high slope efficiency implies that excited state absorption (ESA) is negligible. The potential for efficiency and the tuning range of this material satisfy the requirements for a pump laser for a high density storage medium incorporating Nd.sup.3+ or Tm.sup.3+ for use in a multimegajoule single shot fusion research facility.

    摘要翻译: 铬掺杂的氯氰菊酯LiCaAlF6:Cr3 +可用作具有高固有斜率效率的可调谐激光晶体,与目前领先的振动边带Cr3 +激光器的领先业者亚历山大相比或相当。 在Kr激光泵浦激光器配置中,激光输出可以从至少720nm到840nm可调,测量的斜率效率约为60%。 本征斜率效率(大输出耦合极限)可能接近83%的量子缺陷限制值。 高斜率效率意味着激发态吸收(ESA)可以忽略不计。 这种材料的效率和调谐范围的潜力满足了用于在多焦耳单喷射聚变研究设施中使用的Nd3 +或Tm3 +的高密度存储介质的泵浦激光器的要求。

    Yb:FAP and related materials, laser gain medium comprising same, and
laser systems using same
    2.
    发明授权
    Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same 失效
    Yb:FAP和相关材料,包括其的激光增益介质和使用其的激光系统

    公开(公告)号:US5280492A

    公开(公告)日:1994-01-18

    申请号:US792792

    申请日:1991-11-15

    IPC分类号: C30B15/00 H01S3/16

    摘要: An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.

    摘要翻译: 包括Yb:YAG在内的掺镱掺杂激光材料包括掺杂镱的掺杂磷灰石(Yb:Ca5(PO4)3F)或Yb:FAP或与FAP结构相关的镱掺杂晶体。 新的激光材料用于由二极管泵浦源泵浦的激光系统,其输出接近0.905微米或0.98微米,例如InGaAs和AlInGaAs,或其他窄0.90微米或0.98微米的窄带泵浦源。 激光系统以常规或基态耗尽模式运行。