Active bit-line clamp circuit for flat cell structure of mask read-only
memory
    1.
    发明授权
    Active bit-line clamp circuit for flat cell structure of mask read-only memory 失效
    有源位线钳位电路用于平板单元结构的掩模只读存储器

    公开(公告)号:US5475637A

    公开(公告)日:1995-12-12

    申请号:US365602

    申请日:1994-12-27

    申请人: Stephen Fu Te-Sun Wu

    发明人: Stephen Fu Te-Sun Wu

    IPC分类号: G11C7/12 G11C17/12 G11C7/00

    CPC分类号: G11C7/12 G11C17/126

    摘要: A mask ROM device having active bit-line clamp circuits which employ a voltage-to-current converter as the clamp circuit for selectively coupling a main bit line of the ROM memory device to a selected one of virtual ground lines. The voltage-to-current converter is selectively coupled between the main bit line and a first or second virtual ground line for clamping therebetween. The voltage-to-current converter converts the voltage difference between the coupled main bit line and the selected first or second virtual ground line into a corresponding current in proportion to a voltage difference, the converted current being coupled to the selected first or second virtual ground line.

    摘要翻译: 一种具有有源位线钳位电路的掩模ROM器件,其采用电压 - 电流转换器作为钳位电路,用于选择性地将ROM存储器件的主位线耦合到所选择的虚拟接地线中。 电压 - 电流转换器选择性地耦合在主位线和第一或第二虚拟接地线之间用于夹紧它们之间。 电压 - 电流转换器将耦合的主位线和所选择的第一或第二虚拟接地线之间的电压差转换成与电压差成比例的对应电流,转换的电流耦合到所选择的第一或第二虚拟地 线。

    Clamp circuit for read-only-memory devices
    2.
    发明授权
    Clamp circuit for read-only-memory devices 失效
    只读存储器件的钳位电路

    公开(公告)号:US5612915A

    公开(公告)日:1997-03-18

    申请号:US591390

    申请日:1996-01-25

    IPC分类号: G11C7/12 G11C11/34

    CPC分类号: G11C7/12

    摘要: A clamp circuit for a read-only-memory (ROM) device provides clamp voltages which can uniformly compensate for the parasitic capacitance on ROM word lines and improve the performance of the ROM device. The clamp circuit includes an active load, a plurality of amplifiers and a transmission gate. The amplifiers have various trip voltages and are controlled by different decoding signals for providing various clamp voltages to different word lines in the ROM device. Each amplifier is composed of a NOR gate and a transistor. The amplifier trip voltages can be easily set to desired values when designing NOR gate layout patterns without additional complicated processes being introduced into the fabrication methodology of a semiconductor integrated circuit.

    摘要翻译: 用于只读存储器(ROM)器件的钳位电路提供钳位电压,其可以均匀地补偿ROM字线上的寄生电容并且提高ROM器件的性能。 钳位电路包括有源负载,多个放大器和传输门。 放大器具有各种跳闸电压,并且由不同的解码信号控制,以向ROM器件中的不同字线提供各种钳位电压。 每个放大器由或非门和晶体管组成。 当设计NOR门布局图案时,放大器跳闸电压可以很容易地设置为所需的值,而不会在半导体集成电路的制造方法中引入额外的复杂工艺。