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    Methods for controlling feature dimensions in crystalline substrates
    2.
    发明授权
    Methods for controlling feature dimensions in crystalline substrates 有权
    用于控制晶体衬底中的特征尺寸的方法

    公开(公告)号：US07473649B2

    公开(公告)日：2009-01-06

    申请号：US11492518

    申请日：2006-07-24

    申请人： Steven D Leith ,  Jeffrey S Obert ,  Eric L. Nikkel ,  Kenneth M Kramer

    发明人： Steven D Leith ,  Jeffrey S Obert ,  Eric L. Nikkel ,  Kenneth M Kramer

    IPC分类号： H01L21/302 ,  H01L211/461

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1634

    摘要： A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

    摘要翻译： 在衬底中形成槽的方法包括在衬底的第一侧上生长氧化物层，图案化和蚀刻氧化物层以形成开口，形成覆盖开口和氧化物层的材料，通过第二层去除衬底材料 并且各向异性蚀刻基板，以在各向异性蚀刻期间在与氧化物层中的开口对准的第一侧产生基板开口。 选择覆盖开口和氧化物层的材料，使得在材料和衬底的界面处的衬底的各向异性蚀刻速率大于衬底在氧化物层和衬底的界面处的各向异性蚀刻速率。

    Slotted substrate and slotting process
    3.
    发明授权
    Slotted substrate and slotting process 失效
    开槽衬底和开槽过程

    公开(公告)号：US06818138B2

    公开(公告)日：2004-11-16

    申请号：US09888975

    申请日：2001-06-22

    申请人： Jeffrey Scott Obert ,  Eric L. Nikkel ,  Kenneth M. Kramer ,  Steven D Leith

    发明人： Jeffrey Scott Obert ,  Eric L. Nikkel ,  Kenneth M. Kramer ,  Steven D Leith

    IPC分类号： B41J204

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642

    摘要： A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.

    摘要翻译： 制造开槽衬底的方法包括在衬底的第一表面上形成掩模层，以及图案化和蚀刻掩模层以形成通孔。 第一层沉积在掩模层和孔中。 第一层被图案化和蚀刻以在孔中形成插塞。 连续地蚀刻与第一表面相对的基板的第二表面，直到插塞的底表面基本上露出，并且基板中的槽基本形成。

    PRINTHEAD AND RELATED METHODS AND SYSTEMS
    8.
    发明申请
    PRINTHEAD AND RELATED METHODS AND SYSTEMS 有权
    PRINTHEAD及相关方法和系统

    公开(公告)号：US20130106961A1

    公开(公告)日：2013-05-02

    申请号：US13695780

    申请日：2010-05-27

    申请人： Andrew L. Van Brocklin ,  Eric L. Nikkel

    发明人： Andrew L. Van Brocklin ,  Eric L. Nikkel

    IPC分类号： B41J2/045 ,  H01L21/02

    CPC分类号： B41J2/04581 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1626 ,  B41J2002/14354 ,  B41J2002/14467 ,  B41J2202/13 ,  H01L21/02038

    摘要： A printhead includes a moveable membrane, a piezoelectric actuator to move the membrane, and electronic circuitry disposed on the moveable membrane. A method of fabricating a printhead includes fabricating CMOS circuitry on a first side of a circuit wafer, and forming a chamber in a second side of the circuit wafer such that a bottom of the chamber forms a moveable membrane and the CMOS circuitry is disposed on the moveable membrane opposite the bottom of the chamber. A printing system includes a printhead having CMOS circuitry formed on a first side of a moveable membrane, a chamber having a bottom comprising a second side of the moveable membrane, and a piezoelectric actuator formed over the CMOS circuitry, configured to cause displacement of the moveable membrane into the chamber.

    摘要翻译： 打印头包括可移动膜，用于移动膜的压电致动器和设置在可移动膜上的电子电路。 制造打印头的方法包括在电路晶片的第一侧上制造CMOS电路，并且在电路晶片的第二侧形成一个室，使得该室的底部形成可移动膜，并且将该CMOS电路设置在该电路晶片上 可移动的膜与腔室的底部相对。 打印系统包括具有形成在可移动膜的第一侧上的CMOS电路的打印头，具有包括可移动膜的第二侧的底部的室以及形成在CMOS电路上的压电致动器，该压电致动器构造成使可移动膜的位移 膜进入腔室。

    Fluid manifold for fluid ejection device
    9.
    发明授权
    Fluid manifold for fluid ejection device 有权
    用于流体喷射装置的流体歧管

    公开(公告)号：US07874654B2

    公开(公告)日：2011-01-25

    申请号：US11818314

    申请日：2007-06-14

    申请人： Eric L. Nikkel ,  Chien-Hua Chen ,  Tracy B. Forrest

    发明人： Eric L. Nikkel ,  Chien-Hua Chen ,  Tracy B. Forrest

    IPC分类号： B41J2/045

    CPC分类号： B41J2/1603 ,  B41J2/14145 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639

    摘要： A fluid manifold for a fluid ejection device including a plurality of fluid feed slots includes a first layer and a second layer adjacent the first layer, and a first fluid routing and a second fluid routing each provided through the first layer and the second layer. The fluid ejection device is supported by the second layer, and the first fluid routing is communicated with one of the fluid feed slots, and the second fluid routing is communicated with an adjacent one of the fluid feed slots. A pitch of the first fluid routing and the second fluid routing through the first layer is greater than a pitch of the fluid feed slots, and the first fluid routing and the second fluid routing each include a first channel oriented substantially parallel with the fluid feed slots and a second channel oriented substantially perpendicular to the fluid feed slots.

    摘要翻译： 用于包括多个流体供给槽的流体喷射装置的流体歧管包括第一层和邻近第一层的第二层，以及分别通过第一层和第二层设置的第一流体路线和第二流体路线。 流体喷射装置由第二层支撑，并且第一流体路线与流体供给槽中的一个连通，并且第二流体路线与相邻的一个流体供给槽连通。 第一流体路线和通过第一层的第二流体路线的间距大于流体供给槽的间距，并且第一流体路线和第二流体路径各自包括基本上平行于流体供给槽定向的第一通道 以及基本上垂直于流体供给槽定向的第二通道。