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公开(公告)号：US07630257B2
公开(公告)日：2009-12-08
申请号：US11543338
申请日：2006-10-04
IPC分类号： G11C7/00
CPC分类号： G11C11/22 , G11C2207/005 , G11C2207/2281 , G11C2207/229
摘要： One aspect of the invention relates to a method for accessing a memory device. One embodiment relates to a method for accessing a memory device. In the method during a read operation, one data value is provided on a local IO line while complimentary local IO line that is associated with the local IO line is inactivated. During a write operation, another data value is provided on the local IO line and a complimentary data value is provided on the complimentary local IO line. Other systems and methods are also disclosed.
摘要翻译： 本发明的一个方面涉及一种用于访问存储器件的方法。 一个实施例涉及访问存储器件的方法。 在读操作期间的方法中，在本地IO线上提供一个数据值，而与本地IO线相关联的互补本地IO线被停用。 在写操作期间，本地IO线上提供另一个数据值，并在互补的本地IO线上提供补充数据值。 还公开了其它系统和方法。
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公开(公告)号：US20080084773A1
公开(公告)日：2008-04-10
申请号：US11543338
申请日：2006-10-04
CPC分类号： G11C11/22 , G11C2207/005 , G11C2207/2281 , G11C2207/229
摘要： One aspect of the invention relates to a method for accessing a memory device. One embodiment relates to a method for accessing a memory device. In the method during a read operation, one data value is provided on a local IO line while complimentary local IO line that is associated with the local IO line is inactivated. During a write operation, another data value is provided on the local IO line and a complimentary data value is provided on the complimentary local IO line. Other systems and methods are also disclosed.
摘要翻译： 本发明的一个方面涉及一种用于访问存储器件的方法。 一个实施例涉及访问存储器件的方法。 在读操作期间的方法中，在本地IO线上提供一个数据值，而与本地IO线相关联的互补本地IO线被停用。 在写操作期间，本地IO线上提供另一个数据值，并在互补的本地IO线上提供补充数据值。 还公开了其它系统和方法。
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公开(公告)号：US20090168489A1
公开(公告)日：2009-07-02
申请号：US12031619
申请日：2008-02-14
申请人： Sudhir K. Madan , Hugh P. Mcadams
发明人： Sudhir K. Madan , Hugh P. Mcadams
CPC分类号： G11C11/22
摘要： One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a segment of contiguous ferroelectric memory cells arranged in rows and columns. A row of ferroelectric memory cells includes a common wordline that allows access to the memory cells of the row and also includes at least two platelines associated with the row. At least one of the at least two platelines is associated with adjacent columns of ferroelectric memory cells within the row. The row of ferroelectric memory cells includes another word line which is not associated with the at least two platelines. Other methods and systems are also disclosed.
摘要翻译： 一个实施例涉及铁电存储器件。 铁电存储器件包括以行和列布置的连续铁电存储器单元的段。 一列铁电存储器单元包括允许访问行的存储器单元的公共字线，并且还包括与该行相关联的至少两个板条。 所述至少两个平板中的至少一个与所述行内的铁电存储器单元的相邻列相关联。 铁电存储器单元的行包括与至少两个平行线不相关联的另一字线。 还公开了其它方法和系统。
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公开(公告)号：US07920404B2
公开(公告)日：2011-04-05
申请号：US12031619
申请日：2008-02-14
申请人： Sudhir K. Madan , Hugh P. Mcadams
发明人： Sudhir K. Madan , Hugh P. Mcadams
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a segment of contiguous ferroelectric memory cells arranged in rows and columns. A row of ferroelectric memory cells includes a common wordline that allows access to the memory cells of the row and also includes at least two platelines associated with the row. At least one of the at least two platelines is associated with adjacent columns of ferroelectric memory cells within the row. The row of ferroelectric memory cells includes another word line which is not associated with the at least two platelines. Other methods and systems are also disclosed.
摘要翻译： 一个实施例涉及铁电存储器件。 铁电存储器件包括以行和列布置的连续铁电存储器单元的段。 一列铁电存储器单元包括允许访问行的存储器单元的公共字线，并且还包括与该行相关联的至少两个板条。 所述至少两个平板中的至少一个与所述行内的铁电存储器单元的相邻列相关联。 铁电存储器单元的行包括与至少两个平行线不相关联的另一字线。 还公开了其它方法和系统。
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