公开(公告)号：US09466467B2

公开(公告)日：2016-10-11

申请号：US14096735

申请日：2013-12-04

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Hitoshi Ando ,  Kouji Inada ,  Tatsuya Yamada

IPC: H01J37/00 ,  H01J37/32 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/32412 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/10

Abstract: An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

Abstract translation: 离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。