Method and apparatus for sputtering
    1.
    发明申请
    Method and apparatus for sputtering 审中-公开
    溅射的方法和装置

    公开(公告)号:US20080173538A1

    公开(公告)日:2008-07-24

    申请号:US11655488

    申请日:2007-01-19

    IPC分类号: C23C14/34

    摘要: A sputtering apparatus includes a target electrode and a bias source electrically coupled to the target electrode. A wafer chuck is spaced from the target electrode. The wafer chuck is partitioned into a plurality of zones, each zone being coupled to receive an AC signal having an amplitude that can vary by zone. At least one RF coil is positioned adjacent a space between the target electrode and the wafer chuck.

    摘要翻译: 溅射装置包括目标电极和与靶电极电耦合的偏压源。 晶片卡盘与目标电极间隔开。 晶片卡盘被划分成多个区域,每个区域被耦合以接收具有可以随区域变化的幅度的AC信号。 至少一个RF线圈被定位成邻近目标电极和晶片卡盘之间的空间。