公开(公告)号：US20140141537A1

公开(公告)日：2014-05-22

申请号：US14084212

申请日：2013-11-19

Applicant: SunEdison, Inc.

Inventor： Robert J. Falster ,  Vladimir V. Voronkov ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

IPC: H01L21/324 ,  H01L21/66

CPC classification number: H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L22/12

Abstract: Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour.

Abstract translation: 用于处理硅晶片以形成高密度不均匀分布的氧的方法在其中析出核，使得在经受基本上任意的任何电子器件制造工艺的热处理循环后，晶片在本体中形成氧沉淀物， 公开了表面附近的无沉淀区。 所述方法包括通过在约400℃至约600℃之间进行热处理至少约1小时来活化无活性氧沉淀核。