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公开(公告)号:US10100428B2
公开(公告)日:2018-10-16
申请号:US14802729
申请日:2015-07-17
Applicant: SunEdison, Inc.
Inventor: Jihong Chen , Tirumani N. Swaminathan
Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
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2.METHODS FOR REDUCING THE EROSION RATE OF A CRUCIBLE DURING CRYSTAL PULLING 审中-公开
Title translation: 降低晶体拉伸时可溶性腐蚀速率的方法公开(公告)号:US20170016142A1
公开(公告)日:2017-01-19
申请号:US14802729
申请日:2015-07-17
Applicant: SunEdison, Inc.
Inventor: Jihong Chen , Tirumani N. Swaminathan
Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
Abstract translation: 公开了在坩埚接触点处降低侵蚀速率的晶体拉拔器中的硅锭的生产。
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3.METHODS FOR REDUCING DEPOSITS IN INGOT PULLER EXHAUST SYSTEMS 审中-公开
Title translation: 用于减少吸入式排气系统沉积物的方法公开(公告)号:US20170016141A1
公开(公告)日:2017-01-19
申请号:US14802712
申请日:2015-07-17
Applicant: SunEdison, Inc.
Inventor: Tirumani N. Swaminathan , Jihong Chen
IPC: C30B15/04
Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
Abstract translation: 公开了在牵引器排气系统中涉及减少硅沉积物形成的晶体拉拔器中的硅锭的生产。
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公开(公告)号:US10145023B2
公开(公告)日:2018-12-04
申请号:US14802712
申请日:2015-07-17
Applicant: SunEdison, Inc.
Inventor: Tirumani N. Swaminathan , Jihong Chen
Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
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