公开(公告)号：US10100428B2

公开(公告)日：2018-10-16

申请号：US14802729

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Jihong Chen ,  Tirumani N. Swaminathan

IPC: C30B15/04 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  C30B15/02

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

公开(公告)号：US20170016142A1

公开(公告)日：2017-01-19

申请号：US14802729

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Jihong Chen ,  Tirumani N. Swaminathan

IPC: C30B15/04 ,  C30B15/10 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B15/10 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

Abstract translation: 公开了在坩埚接触点处降低侵蚀速率的晶体拉拔器中的硅锭的生产。

公开(公告)号：US20170016141A1

公开(公告)日：2017-01-19

申请号：US14802712

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  Jihong Chen

IPC: C30B15/04

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B15/02 ,  C30B27/02 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Abstract translation: 公开了在牵引器排气系统中涉及减少硅沉积物形成的晶体拉拔器中的硅锭的生产。

公开(公告)号：US10145023B2

公开(公告)日：2018-12-04

申请号：US14802712

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  Jihong Chen

IPC: C30B15/04 ,  C30B15/00 ,  C30B15/02 ,  C30B27/02 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.