公开(公告)号：US10145023B2

公开(公告)日：2018-12-04

申请号：US14802712

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  Jihong Chen

IPC: C30B15/04 ,  C30B15/00 ,  C30B15/02 ,  C30B27/02 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

公开(公告)号：US09822466B2

公开(公告)日：2017-11-21

申请号：US14087604

申请日：2013-11-22

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  John David Hilker ,  Salvador Zepeda

IPC: C30B15/12 ,  C30B15/00 ,  C30B29/06 ,  C30B11/00

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

公开(公告)号：US20170016141A1

公开(公告)日：2017-01-19

申请号：US14802712

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  Jihong Chen

IPC: C30B15/04

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B15/02 ,  C30B27/02 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Abstract translation: 公开了在牵引器排气系统中涉及减少硅沉积物形成的晶体拉拔器中的硅锭的生产。

公开(公告)号：US20150144056A1

公开(公告)日：2015-05-28

申请号：US14087604

申请日：2013-11-22

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  John David Hilker ,  Salvador Zepeda

IPC: C30B15/12 ,  C30B15/00

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

Abstract translation: 用于从熔体生长锭的系统包括外坩埚，内坩埚和堰。 外坩埚包括第一侧壁和第一基座。 第一侧壁和第一基座限定用于容纳熔体的外部空腔。 内坩埚位于外腔内，并具有中心纵轴。 内坩埚包括第二侧壁和在其中具有开口的第二基部。 第二基座中的开口与中心纵向轴线同心。 堰体设置在外坩埚和用于支撑内坩埚的内坩埚之间。

公开(公告)号：US10100428B2

公开(公告)日：2018-10-16

申请号：US14802729

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Jihong Chen ,  Tirumani N. Swaminathan

IPC: C30B15/04 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  C30B15/02

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

公开(公告)号：US09863063B2

公开(公告)日：2018-01-09

申请号：US14107743

申请日：2013-12-16

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan

IPC: C30B15/12 ,  C30B15/00 ,  C30B11/00

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  Y10T117/1052

Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

公开(公告)号：US20140174337A1

公开(公告)日：2014-06-26

申请号：US14107743

申请日：2013-12-16

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan

IPC: C30B15/12 ,  C30B15/00

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  Y10T117/1052

Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

Abstract translation: 用于生长晶锭的系统包括坩埚和堰。 坩埚具有用于在其中容纳硅熔体的基部和侧壁。 堰沿着坩埚的底部从坩埚的侧壁向内定位。 堰具有连接至少一对腿部的主体，以防止硅熔体在其间移动。

公开(公告)号：US20170016142A1

公开(公告)日：2017-01-19

申请号：US14802729

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Jihong Chen ,  Tirumani N. Swaminathan

IPC: C30B15/04 ,  C30B15/10 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B15/10 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

Abstract translation: 公开了在坩埚接触点处降低侵蚀速率的晶体拉拔器中的硅锭的生产。