摘要:
A verification method of a system on chip includes receiving a test generator and an exception handler; generating, by the test generator, a test program including an exception-causing instruction based on a test template; executing a first instruction at a first operating state as the test program is executed; stopping the execution of the test program and performing a fixed instruction sequence included in the exception handler when the exception-causing instruction is executed during the execution of the test program; and resuming the test program from a second instruction at a second operating state set after the fixed instruction sequence is performed, the second instruction corresponding to an address adjacent to an address of the exception-causing instruction.
摘要:
A reciprocating motor and a reciprocating compressor having the same are provided. One side of each of outer and inner cores forming a stator are connected to each other, to prevent a magnetic flux generated by the coil and a magnet from leaking out of the stator. Hence, it is possible to fabricate components of the reciprocating compressor employing such a reciprocating motor by using a relatively low-cost magnetic substance, resulting in a decrease in fabricating costs of the compressor. Also, a length of the magnet may be reduced, which results in a reduction of the cost for the magnet, thereby decreasing fabricating costs of the reciprocating motor and the reciprocating compressor employing the reciprocating motor.
摘要:
A flash memory device is provided, and the flash memory device comprises memory cells, a sense node connected to a selected bit line, a load circuit connected to the sense node, and first and second sense and register circuits, each connected to the sense node. The first sense and register circuit is configured to store a first data value in accordance with the voltage level of the sense node during an initial read interval of a multi-bit program operation. The load circuit is configured to selectively pre-charge the sense node in accordance with the data value stored in the first sense and register circuit during a verify read interval of the multi-bit program operation. A multi-bit programming method for the flash memory device is also provided.
摘要:
A flash memory device that includes a voltage generator circuit configured to generate a program voltage, a pass voltage, and a high voltage; a plurality of planes configured to perform a program operation in response to the program, pass, and high voltages and to verify the program operation, respectively; and control logic configured to control the planes in response to verification results from the planes, wherein the control logic controls the planes so as to interrupt the program and pass voltages or the high voltage from being applied to program-passed planes.