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公开(公告)号：US20100327256A1
公开(公告)日：2010-12-30
申请号：US12495258
申请日：2009-06-30
申请人： Sungsoo YI , Nathan F. GARDNER , Qi Laura Ye
发明人： Sungsoo YI , Nathan F. GARDNER , Qi Laura Ye
CPC分类号： H01L33/007 , H01L33/04 , H01L33/12 , H01S5/32341
摘要： A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
摘要翻译： 一种器件包括：半导体结构，包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。
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2.发明申请公开(公告)号：US20100264454A1
公开(公告)日：2010-10-21
申请号：US12830885
申请日：2010-07-06
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
摘要翻译： 根据本发明的实施例，III族氮化物发光器件的发光层中的至少部分应变消除通过配置其上至少一层器件的表面生长使得该层横向膨胀的表面来提供 至少部分放松。 该层被称为应变消除层。 在一些实施例中，发光层本身是应变消除层，这意味着发光层在允许发光层横向膨胀以减轻应变的表面上生长。 在一些实施例中，在发光层之前生长的层是应变消除层。 在第一组实施方案中，应变消除层在纹理表面上生长。
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