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公开(公告)号：US07522172B2
公开(公告)日：2009-04-21
申请号：US11439207
申请日：2006-05-24
申请人： Susumu Tanase , Atsuhiro Yamashita , Yukio Mori , Haruhiko Murata , Koji Marumo , Kazunobu Mameno
发明人： Susumu Tanase , Atsuhiro Yamashita , Yukio Mori , Haruhiko Murata , Koji Marumo , Kazunobu Mameno
IPC分类号： G06T15/00
CPC分类号： G09G3/2003 , G09G3/3208 , G09G2300/0452 , G09G2320/0242 , G09G2330/08 , G09G2340/06 , G09G2360/16
摘要： A display device has: an RGB-RGBW conversion circuit that converts RGB signals fed thereto into RGBW signals; a display panel that has a plurality of dots each composed of four, namely R, G, B, and W, unit pixels and that displays an image based on the RGBW signals; a defect position specifier that specifies, if a unit pixel is found defective, a position of the defective pixel on the display panel; and a conversion rate controller that controls the rate at which, when the RGB signals are converted into the RGBW signals, the RGB signals are converted into a W signal according to the position of the defective pixel. If the defective pixel is a W pixel, the conversion rate for pixels adjacent thereto is made lower than the standard conversion rate set for the entire display panel.
摘要翻译： 显示装置具有：RGB-RGBW转换电路，其将馈送到其的RGB信号转换为RGBW信号; 具有由四个组成的多个点即R，G，B和W的显示面板，单位像素，并且基于RGBW信号显示图像; 缺陷位置说明符，如果单位像素被发现有缺陷，则指示该缺陷像素在显示面板上的位置; 以及转换速率控制器，其控制当RGB信号被转换成RGBW信号时，根据缺陷像素的位置将RGB信号转换为W信号的速率。 如果缺陷像素是W像素，则与其相邻的像素的转换率低于为整个显示面板设置的标准转换率。
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公开(公告)号：US20060268003A1
公开(公告)日：2006-11-30
申请号：US11439207
申请日：2006-05-24
申请人： Susumu Tanase , Atsuhiro Yamashita , Yukio Mori , Haruhiko Murata , Koji Marumo , Kazunobu Mameno
发明人： Susumu Tanase , Atsuhiro Yamashita , Yukio Mori , Haruhiko Murata , Koji Marumo , Kazunobu Mameno
IPC分类号： G09G5/02
CPC分类号： G09G3/2003 , G09G3/3208 , G09G2300/0452 , G09G2320/0242 , G09G2330/08 , G09G2340/06 , G09G2360/16
摘要： A display device has: an RGB-RGBW conversion circuit that converts RGB signals fed thereto into RGBW signals; a display panel that has a plurality of dots each composed of four, namely R, G, B, and W, unit pixels and that displays an image based on the RGBW signals; a defect position specifier that specifies, if a unit pixel is found defective, a position of the defective pixel on the display panel; and a conversion rate controller that controls the rate at which, when the RGB signals are converted into the RGBW signals, the RGB signals are converted into a W signal according to the position of the defective pixel. If the defective pixel is a W pixel, the conversion rate for pixels adjacent thereto is made lower than the standard conversion rate set for the entire display panel.
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公开(公告)号：US07477218B2
公开(公告)日：2009-01-13
申请号：US10541373
申请日：2004-11-08
申请人： Masayuki Koga , Koji Marumo
发明人： Masayuki Koga , Koji Marumo
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2300/0876 , G09G2320/0233 , G09G2320/043 , H01L27/3244
摘要： When a selection TFT and a correction TFT are turned on, a data voltage of a data line is stored in a storage capacitor as a gate voltage of a driving TFT. After turning off the selection TFT, a voltage of a capacitor line SC falls, thereby turning on the driving TFT to supply a driving current to an organic EL element. The correction TFT is in the ON state before the capacitor line SC falls, and is turned off in the course of the fall of the line. Consequently, the capacitance of the correction TFT changes during the fall of the gate voltage, and the gradient of the gate voltage fall of the driving TFT is changed, thereby setting the gate voltage after the capacitor line SC falls in accordance with variation in threshold of the driving TFT. Particularly by disposing the driving TFT and the correction TFT adjacent to each other, the two TFTs are provided with the same properties to achieve effective correction.
摘要翻译： 当选择TFT和校正TFT导通时，将数据线的数据电压作为驱动TFT的栅极电压存储在存储电容器中。 在关闭选择TFT之后，电容器线SC的电压下降，从而导通驱动TFT以向有机EL元件提供驱动电流。 校正TFT在电容器线SC下降之前处于导通状态，并且在线的下降过程中被关断。 因此，校正TFT的电容在栅极电压的下降期间变化，并且驱动TFT的栅极电压下降的梯度发生变化，从而根据电容器线SC的阈值的变化来设置电容器线SC之后的栅极电压 驱动TFT。 特别是通过将驱动TFT和校正TFT彼此相邻设置，两个TFT被提供相同的性质以实现有效的校正。
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公开(公告)号：US07324075B2
公开(公告)日：2008-01-29
申请号：US10857406
申请日：2004-05-28
申请人： Keiichi Sano , Koji Marumo , Masayuki Koga , Kenya Uesugi , Michiru Senda , Kuni Yamamura
发明人： Keiichi Sano , Koji Marumo , Masayuki Koga , Kenya Uesugi , Michiru Senda , Kuni Yamamura
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/043 , G09G2300/0819 , G09G2300/0876 , G09G2320/0233
摘要： When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.
摘要翻译： 当开关TFT接通时，数据线上的数据电压作为驱动器TFT的栅极电压存储在存储电容器中。 在该状态下，使脉冲驱动线上的电压下降。 具有连接到参考电压的第二电极的AMOS型电容元件连接到驱动器TFT的栅极。 MOS电容元件在脉冲驱动线下降之前处于导通状态，并且在下降期间变为断开状态，并且电容在接通状态切换到关闭状态时改变。 因此，栅极电压的下降斜率发生变化，并且能够根据驱动TFT之间的阈值的变化来校正脉冲驱动线上的下降之后的栅极电压。
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公开(公告)号：US20060145960A1
公开(公告)日：2006-07-06
申请号：US10541373
申请日：2004-11-08
申请人： Masayuki Koga , Koji Marumo
发明人： Masayuki Koga , Koji Marumo
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2300/0876 , G09G2320/0233 , G09G2320/043 , H01L27/3244
摘要： When a selection TFT (20) and a correction TFT (22) are turned on, a data voltage of a data line is stored in a storage capacitor 28 as a gate voltage of a driving TFT (24). After turning off the selection TFT (20), a voltage of a capacitor line SC falls, thereby turning on the driving TFT (24) to supply a driving current to an organic EL element (26). The correction TFT (22) is in the ON state before the capacitor line SC falls, and is turned off in the course of the fall of the line. Consequently, the capacitance of the correction TFT (22) changes during the fall of the gate voltage, and the gradient of the gate voltage fall of the driving TFT (24) is changed, thereby setting the gate voltage after the capacitor line SC falls in accordance with variation in threshold of the driving TFT (24). Particularly by disposing the driving TFT (24) and the correction TFT (22) adjacent to each other, the two TFTs are provided with the same properties to achieve effective correction.
摘要翻译： 当选择TFT（20）和校正TFT（22）导通时，数据线的数据电压作为驱动TFT（24）的栅极电压存储在存储电容器28中。 在关闭选择TFT（20）之后，电容线SC的电压下降，从而导通驱动TFT（24），向有机EL元件（26）提供驱动电流。 校正TFT（22）在电容器线SC下降之前处于导通状态，并且在线的下降过程中被关断。 因此，校正TFT（22）的电容在栅极电压的下降期间变化，并且驱动TFT（24）的栅极电压下降的梯度发生变化，从而在电容器线SC下降之后设置栅极电压 根据驱动TFT（24）的阈值变化。 特别是通过将驱动TFT（24）和校正TFT（22）相互相邻配置，两个TFT具有相同的性质以实现有效的校正。
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公开(公告)号：US20050017929A1
公开(公告)日：2005-01-27
申请号：US10857406
申请日：2004-05-28
申请人： Keiichi Sano , Koji Marumo , Masayuki Koga , Kenya Uesugi , Michiru Senda , Kuni Yamamura
发明人： Keiichi Sano , Koji Marumo , Masayuki Koga , Kenya Uesugi , Michiru Senda , Kuni Yamamura
CPC分类号： G09G3/3233 , G09G2300/043 , G09G2300/0819 , G09G2300/0876 , G09G2320/0233
摘要： When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.
摘要翻译： 当开关TFT接通时，数据线上的数据电压作为驱动器TFT的栅极电压存储在存储电容器中。 在该状态下，使脉冲驱动线上的电压下降。 具有连接到参考电压的第二电极的AMOS型电容元件连接到驱动器TFT的栅极。 MOS电容元件在脉冲驱动线下降之前处于导通状态，并且在下降期间变为断开状态，并且电容在接通状态切换到关闭状态时改变。 因此，栅极电压的下降斜率发生变化，并且能够根据驱动TFT之间的阈值的变化来校正脉冲驱动线上的下降之后的栅极电压。
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公开(公告)号：US07930826B2
公开(公告)日：2011-04-26
申请号：US11930424
申请日：2007-10-31
申请人： Koji Inoue , Yasushi Watanabe , Koji Marumo , Junichi Okada
发明人： Koji Inoue , Yasushi Watanabe , Koji Marumo , Junichi Okada
CPC分类号： B62D1/16 , B21K1/12 , B21K1/762 , B21K1/763 , B21K21/16 , B62D1/20 , F16D1/0864 , F16D2250/00 , Y10T29/49622 , Y10T29/49805 , Y10T29/49995
摘要： When an outer circumference of a clamping portion 25 and an outer circumference of a circular outer circumference 26 are restrained by a die 6 while inserting a non-circular punch 5 into a circular hole 28, paddings 27, 27 are pressed by a semi-circular inner circumference of the die 6 to thereby be forced into interior of the circular hole 28. The volume of the paddings 27, 27 is set to be substantially the same as a volume obtained by subtracting the volume of a non-circular hole 23 in an extension shaft 2 from the volume of the circular hole 28. The circular hole 28 is deformed, and the paddings 27, 27 forced into the circular hole 28 abut with inclined planes 52, 52 of the punch 5, whereby the non-circular hole 23 is formed in the extension shaft 2.
摘要翻译： 当将非圆形冲头5插入圆形孔28中时，夹持部25的外周和圆形外周26的外周被模具6约束，将填充物27,27按半圆 模具6的内周，从而被迫进入圆形孔28的内部。填充物27,27的体积被设定为与通过减去非圆形孔23的体积而获得的体积基本相同 延伸轴2从圆形孔28的体积变形。圆形孔28变形，被迫进入圆形孔28的垫圈27,27与冲头5的倾斜平面52,52抵接，由此非圆形孔23 形成在延伸轴2中。
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