公开(公告)号：US09576098B2

公开(公告)日：2017-02-21

申请号：US14066272

申请日：2013-10-29

申请人： Synopsys, Inc.

发明人： Emre Tuncer ,  Hui Zheng ,  Vivek Raghavan ,  Anirudh Devgan ,  Amir Ajami ,  Alessandra Nardi ,  Tao Lin ,  Pramod Thazhathethil ,  Alfred Wong

IPC分类号： G06F17/50 ,  G06F19/00 ,  G03F1/00 ,  G21K5/00

CPC分类号： G06F17/5081 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/12

摘要： A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

摘要翻译： 执行泄漏分析的方法包括接收指定集成电路的信息。 然后确定与集成电路相关联的形状的邻域。 基于形状附近生成与集成电路相关的泄漏信息。 可以通过从内部形状确定第一单元的边界的第一组间距来确定形状的邻域。 可以从第一单元的边界到第二单元的形状来确定第二组间隔。 可以使用第一和第二组间隔来表征光刻工艺。

公开(公告)号：US20140181762A1

公开(公告)日：2014-06-26

申请号：US14066272

申请日：2013-10-29

申请人： Synopsys, Inc.

发明人： Emre Tuncer ,  Hui Zheng ,  Vivek Raghavan ,  Anirudh Devgan ,  Amir Ajami ,  Alessandra Nardi ,  Tao Lin ,  Pramod Thazhathethil ,  Alfred Wong

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/12

摘要： A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

摘要翻译： 执行泄漏分析的方法包括接收指定集成电路的信息。 然后确定与集成电路相关联的形状邻域基于形状的邻域生成与集成电路相关联的泄漏信息。 可以通过从内部形状确定第一单元的边界的第一组间距来确定形状的邻域。 可以从第一单元的边界到第二单元的形状来确定第二组间隔。 可以使用第一和第二组间隔来表征光刻工艺。