公开(公告)号：US20130292750A1

公开(公告)日：2013-11-07

申请号：US13595494

申请日：2012-08-27

申请人： Szu-Ying CHEN ,  Min-Feng KAO ,  Jen-Cheng LIU ,  Feng-Chi HUNG ,  Dun-Nian YAUNG

发明人： Szu-Ying CHEN ,  Min-Feng KAO ,  Jen-Cheng LIU ,  Feng-Chi HUNG ,  Dun-Nian YAUNG

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689

摘要： A method of forming of an image sensor device includes an isolation well formed in a pixel region of a substrate. The isolation well has a first conductivity type. A gate stack is formed over the isolation well on the substrate. A mask layer is formed over the isolation well and covering at least a majority portion of the gate stack. A plurality of dopants is implanted in the pixel region, using the gate stack and the mask layer as masks, to form doped isolation features. The plurality of dopants has the first conductivity type. A source region and a drain region are formed on opposite sides of the gate stack in the substrate. The source region and the drain region have a second conductivity type opposite to the A conductivity.

摘要翻译： 形成图像传感器装置的方法包括在衬底的像素区域中形成的隔离阱。 隔离阱具有第一导电类型。 栅极堆叠形成在衬底上的隔离阱上。 掩模层形成在隔离阱上并覆盖栅极堆叠的至少大部分部分。 使用栅极堆叠和掩模层作为掩模将多个掺杂剂注入到像素区域中，以形成掺杂的隔离特征。 多个掺杂剂具有第一导电类型。 源极区域和漏极区域形成在衬底中的栅极堆叠的相对侧上。 源极区域和漏极区域具有与A电导率相反的第二导电类型。

公开(公告)号：US20120280348A1

公开(公告)日：2012-11-08

申请号：US13099092

申请日：2011-05-02

申请人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

发明人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。