公开(公告)号：US20110298072A1

公开(公告)日：2011-12-08

申请号：US12794101

申请日：2010-06-04

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US20100184242A1

公开(公告)日：2010-07-22

申请号：US12355211

申请日：2009-01-16

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

IPC分类号： H01L21/76 ,  H01L31/02 ,  H01L31/0224

CPC分类号： H01L21/76237 ,  H01L21/2652 ,  H01L27/0629 ,  H01L27/1463 ,  H01L27/14683

摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.

摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。

公开(公告)号：US08981510B2

公开(公告)日：2015-03-17

申请号：US12794101

申请日：2010-06-04

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US20120280348A1

公开(公告)日：2012-11-08

申请号：US13099092

申请日：2011-05-02

申请人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

发明人： Keng-Yu CHOU ,  Dun-Nian YAUNG ,  Jen-Cheng LIU ,  Pao-Tung CHEN ,  Wen-De WANG ,  Chun-Chieh CHUANG ,  Min-Feng KAO

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。

公开(公告)号：US20120205730A1

公开(公告)日：2012-08-16

申请号：US13026994

申请日：2011-02-14

申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。

公开(公告)号：US20100181283A1

公开(公告)日：2010-07-22

申请号：US12356968

申请日：2009-01-21

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

IPC分类号： B44C1/22

CPC分类号： H01L27/14636 ,  H01L24/82 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/14 ,  H01L2924/30105

摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.

摘要翻译： 公开了一种制造具有改进的接合能力的半导体器件的方法。 该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和 第二导电层。

公开(公告)号：US08455971B2

公开(公告)日：2013-06-04

申请号：US13026994

申请日：2011-02-14

申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。

公开(公告)号：US08293122B2

公开(公告)日：2012-10-23

申请号：US12356968

申请日：2009-01-21

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

IPC分类号： H01B13/00

CPC分类号： H01L27/14636 ,  H01L24/82 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/14 ,  H01L2924/30105

摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.

摘要翻译： 公开了一种制造具有改进的接合能力的半导体器件的方法。 该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和 第二导电层。

公开(公告)号：US07968424B2

公开(公告)日：2011-06-28

申请号：US12355211

申请日：2009-01-16

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

IPC分类号： H01L21/76

CPC分类号： H01L21/76237 ,  H01L21/2652 ,  H01L27/0629 ,  H01L27/1463 ,  H01L27/14683

摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.

摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。