公开(公告)号：US5989776A

公开(公告)日：1999-11-23

申请号：US158948

申请日：1998-09-21

申请人： T. E. Felter ,  G. D. Kubiak

发明人： T. E. Felter ,  G. D. Kubiak

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03C1/492

CPC分类号： G03F7/094 ,  G03F7/0042 ,  Y10S430/148

摘要： A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

摘要翻译： 使用投影光刻和极紫外（EUV）辐射，在0.4-0.05μm的尺寸范围内产生特征图案阵列，特别是栅极孔的方法。 使用高能激光束来蒸发目标材料以产生等离子体，其进而产生用于光刻应用的约13nm的特征波长的极紫外辐射。 辐射通过一系列反射镜传送到具有待印刷图案的掩模。 通过适当的光学元件和单次曝光将缩小的聚焦掩模图案透射到涂覆有被设计为对EUV辐射透明的光致抗蚀剂的基底，并且还满足常规的加工方法。 用于碳化硼聚合物，氢氯代烃及其混合物的极紫外辐射的光致抗蚀剂组合物。

公开(公告)号：US6162577A

公开(公告)日：2000-12-19

申请号：US158943

申请日：1998-09-21

申请人： T. E. Felter ,  G. D. Kubiak

发明人： T. E. Felter ,  G. D. Kubiak

IPC分类号： G03F7/004 ,  G03F7/09

CPC分类号： G03F7/094 ,  G03F7/0042 ,  Y10S430/148

摘要： A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

摘要翻译： 使用投影光刻和极紫外（EUV）辐射，在0.4-0.05μm的尺寸范围内产生特征图案阵列，特别是栅极孔的方法。 使用高能激光束来蒸发目标材料以产生等离子体，其进而产生用于光刻应用的约13nm的特征波长的极紫外辐射。 辐射通过一系列反射镜传送到具有待印刷图案的掩模。 通过适当的光学元件和单次曝光将缩小的聚焦掩模图案透射到涂覆有被设计为对EUV辐射透明的光致抗蚀剂的基底，并且还满足常规的加工方法。