公开(公告)号：US11145709B2

公开(公告)日：2021-10-12

申请号：US16439636

申请日：2019-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hong-Yang Chen ,  Tian Sheng Lin ,  Yi-Cheng Chiu ,  Hung-Chou Lin ,  Yi-Min Chen ,  Kuo-Ming Wu ,  Chiu-Hua Chung

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L31/119 ,  H01L49/02 ,  H01L27/01 ,  H01L27/06

摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.