-
1.发明授权公开(公告)号：US12072633B2
公开(公告)日：2024-08-27
申请号：US18334640
申请日：2023-06-14
发明人： Chih-Tsung Shih , Yu-Hsun Wu , Bo-Tsun Liu , Tsung-Chuan Lee
CPC分类号： G03F7/2004 , G03F1/24
摘要： A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
-
2.发明授权公开(公告)号：US11720025B2
公开(公告)日：2023-08-08
申请号：US17848139
申请日：2022-06-23
发明人： Chih-Tsung Shih , Yu-Hsun Wu , Bo-Tsun Liu , Tsung-Chuan Lee
CPC分类号： G03F7/2004 , G03F1/24
摘要： A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
-
公开(公告)号：US11119420B2
公开(公告)日：2021-09-14
申请号：US16885149
申请日：2020-05-27
发明人： Yi-Wei Lee , Jui-Chieh Chen , Chih-Tsung Shih , Tsung-Chuan Lee
IPC分类号： G03F7/20 , H01L21/677 , H01L21/027
摘要： In accordance with some embodiments, a method for processing a semiconductor wafer is provided. The method includes transporting a carrier along with a reticle supported by the carrier in a lithography exposure apparatus. The method also includes regulating particles in the carrier through a magnetic field. In addition, the method includes removing the reticle from the carrier. The method further includes performing, using the reticle, a lithography exposure process to the semiconductor wafer in the lithography exposure apparatus.
-
公开(公告)号：US12066765B2
公开(公告)日：2024-08-20
申请号：US17988432
申请日：2022-11-16
CPC分类号： G03F7/70708 , G03F1/66 , G03F7/70916
摘要： A method for preventing photomask contamination includes securing a photomask on a bottom surface of an electrostatic chuck; generating a first voltage at a peripheral area of the bottom surface of the electrostatic chuck to attract a particle onto the peripheral area of the bottom surface of the electrostatic chuck, wherein the peripheral area of the bottom surface of the electrostatic chuck is not directly above the photomask; after generating the first voltage, generating a second voltage at the peripheral area of the bottom surface of the electrostatic chuck to repulse the particle, wherein the first voltage and the second voltage have opposite electrical properties; and generating a third voltage, by using a collecting plate, near a sidewall of the photomask to attract the repulsed particle.
-
公开(公告)号：US11506985B2
公开(公告)日：2022-11-22
申请号：US16396911
申请日：2019-04-29
摘要： A method for preventing photomask contamination includes generating a first electric field from an electrostatic chuck to attract a charged particle onto the electrostatic chuck, controlling the first electric field to detach the charged particle from the electrostatic chuck, and generating a second electric field below the electrostatic chuck to attract the charged particle.
-
公开(公告)号：US09625822B2
公开(公告)日：2017-04-18
申请号：US14067167
申请日：2013-10-30
发明人： Chi-Cheng Tsai , Hung-Chi Wu , Tsung-Chuan Lee , Chung-Hsien Lin
CPC分类号： G03F7/38 , G03F7/11 , G03F7/2024 , G03F7/2041 , G03F7/70341
摘要： Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.014 秒)
