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1.发明授权公开(公告)号：US11720025B2
公开(公告)日：2023-08-08
申请号：US17848139
申请日：2022-06-23
发明人： Chih-Tsung Shih , Yu-Hsun Wu , Bo-Tsun Liu , Tsung-Chuan Lee
CPC分类号： G03F7/2004 , G03F1/24
摘要： A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
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公开(公告)号：US20210364907A1
公开(公告)日：2021-11-25
申请号：US17394005
申请日：2021-08-04
发明人： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
摘要： A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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公开(公告)号：US10997706B2
公开(公告)日：2021-05-04
申请号：US16115699
申请日：2018-08-29
发明人： Zi-Wen Chen , Po-Chung Cheng , Chih-Tsung Shih , Li-Jui Chen , Shih-Chang Shih
摘要： A method of inspecting a reticle includes obtaining a first image of a surface of the reticle at a first height by scanning the reticle surface with a light source at the first height of the reticle surface relative to a reference surface height of the reticle surface and obtaining a second image of the reticle surface at a second height by scanning the reticle surface with the light source at the second height of the reticle surface relative to the reference surface height of the reticle surface. The second height is different from the first height. The first and the second images are then combined to obtain a surface profile image of the reticle.
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公开(公告)号：US10962881B2
公开(公告)日：2021-03-30
申请号：US16019732
申请日：2018-06-27
发明人： Cheng-Kuan Wu , Po-Chung Cheng , Li-Jui Chen , Chih-Tsung Shih
摘要： A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.
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公开(公告)号：US20200264503A1
公开(公告)日：2020-08-20
申请号：US16866368
申请日：2020-05-04
发明人： Chia-Hao Yu , Chi-Lun Lu , Chih-Tsung Shih , Ching-Wei Shen , Jeng-Horng Chen
IPC分类号： G03F1/24
摘要： The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
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公开(公告)号：US20180314144A1
公开(公告)日：2018-11-01
申请号：US15798937
申请日：2017-10-31
发明人： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
摘要： A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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7.发明授权公开(公告)号：US09134604B2
公开(公告)日：2015-09-15
申请号：US14015885
申请日：2013-08-30
发明人： Chih-Tsung Shih , Hsin-Chieh Yao , Shinn-Sheng Yu , Jeng-Horng Chen , Chung-Ju Lee , Anthony Yen
摘要： A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.
摘要翻译： 提供含Cu材料作为EUV掩模的吸收层。 利用含Cu材料的吸收层，根据本公开的各种实施方案，仅通过吸收层的厚度仅为30nm可以实现70nm厚的TaBN中的常规吸收体的相同的光刻性能。 此外，可以减少193-257nm的辐射光的带外（OOB）光斑，以获得更好的光刻性能。
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8.发明申请公开(公告)号：US20150064611A1
公开(公告)日：2015-03-05
申请号：US14015885
申请日：2013-08-30
发明人： Chih-Tsung Shih , Hsin-Chieh Yao , Shinn-Sheng Yu , Jeng-Horng Chen , Chung-Ju Lee , Anthony Yen
摘要： A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.
摘要翻译： 提供含Cu材料作为EUV掩模的吸收层。 利用含Cu材料的吸收层，根据本公开的各种实施方案，仅通过吸收层的厚度仅为30nm可以实现70nm厚度的TaBN中的常规吸收体的相同的光刻性能。 此外，可以减少193-257nm的辐射光的带外（OOB）光斑，以获得更好的光刻性能。
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公开(公告)号：US11809075B2
公开(公告)日：2023-11-07
申请号：US17394005
申请日：2021-08-04
发明人： Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
摘要： A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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10.发明授权公开(公告)号：US11506985B2
公开(公告)日：2022-11-22
申请号：US16396911
申请日：2019-04-29
摘要： A method for preventing photomask contamination includes generating a first electric field from an electrostatic chuck to attract a charged particle onto the electrostatic chuck, controlling the first electric field to detach the charged particle from the electrostatic chuck, and generating a second electric field below the electrostatic chuck to attract the charged particle.
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