公开(公告)号：US20150102456A1

公开(公告)日：2015-04-16

申请号：US14052687

申请日：2013-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Kuo-Min LIN ,  Wei-Lun HONG ,  Ying-Tsung CHEN ,  Liang-Guang CHEN

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/762

CPC分类号： H01L21/31055 ,  H01L21/02236 ,  H01L21/31053 ,  H01L21/76224

摘要： A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes a first cushion layer, a second cushion layer and an insulating filler. The first cushion layer is peripherally enclosed by the semiconductor substrate, the second cushion layer is peripherally enclosed by the first cushion layer, and insulating filler is peripherally enclosed by the second cushion layer. A method for fabricating the semiconductor device is also provided herein.

摘要翻译： 半导体器件包括半导体衬底和沟槽隔离。 沟槽隔离位于半导体衬底中，并且包括第一缓冲层，第二缓冲层和绝缘填料。 第一缓冲层由半导体衬底周边封闭，第二缓冲层由第一缓冲层周边封闭，绝缘填料由第二缓冲层周边封闭。 本文还提供了一种用于制造半导体器件的方法。