公开(公告)号：US20170317164A1

公开(公告)日：2017-11-02

申请号：US15651751

申请日：2017-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Chih CHEN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI ,  Meng-Yi WU ,  Yung-Fa LEE ,  Ying-Lang WANG

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/265

CPC classification number: H01L29/0638 ,  H01L21/26506 ,  H01L29/0603 ,  H01L29/0847 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.