公开(公告)号：US20220367678A1

公开(公告)日：2022-11-17

申请号：US17875144

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kai-Tai CHANG ,  Tung Ying LEE ,  Wei-Sheng YUN ,  Tzu-Chung WANG ,  Chia-Cheng HO ,  Ming-Shiang LIN ,  Tzu-Chiang CHEN

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/306 ,  H01L29/08 ,  H01L27/088

摘要： A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating layer disposed around lower portions of the first and second fins, a first gate electrode extending in a second direction crossing the first direction and a spacer dummy gate layer, and a source/drain epitaxial layer in a source/drain space in the first fin. The source/drain epitaxial layer is adjacent to the first gate electrode and the spacer dummy gate layer with gate sidewall spacers disposed therebetween, and the spacer dummy gate layer includes one selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbon nitride, and silicon carbon oxynitride.

公开(公告)号：US20240145533A1

公开(公告)日：2024-05-02

申请号：US18301571

申请日：2023-04-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kaochao CHEN ,  Chia-Cheng HO ,  Chia-Jui LEE ,  Chia-Yu WEI

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/063 ,  H01L29/402 ,  H01L29/66681 ,  H01L29/7816

摘要： A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field strength near the drain region of the high voltage transistor. In particular, a portion of the stepped dielectric layer near the drain region includes a thickness that is greater relative to a thickness of another portion of the stepped dielectric layer near the gate structure. The increased thickness near the drain region provides increased electric field suppression near the drain region (which operates at high voltages). In this way, the stepped dielectric layer enables the high voltage transistor described herein to achieve higher breakdown voltages without increasing the distance between the gate structure and the drain region of a high voltage transistor.