公开(公告)号：US11996326B2

公开(公告)日：2024-05-28

申请号：US17871179

申请日：2022-07-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Pin Chi Huang ,  Chien-Chang Fang ,  Rung Hung Hsueh

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/76865 ,  H01L21/0217 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/76832 ,  H01L29/66795 ,  H01L29/785

摘要： Methods for making semiconductor device having improve contact structures including the operations of depositing a first dielectric material, depositing a barrier material over the first dielectric material, depositing a second dielectric material over the barrier material, etching a two-slope contact opening with an upper sidewall angle of the opening through the second dielectric material that is less than a lower sidewall angle of the opening through the first dielectric material, and filling the two-slope contact opening with a conductive material, the conductive material.

公开(公告)号：US09368387B2

公开(公告)日：2016-06-14

申请号：US14858094

申请日：2015-09-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tai-Yung Yu ,  Hui Mei Jao ,  Jin-Lin Liang ,  Chien-Hua Li ,  Cheng-Long Tao ,  Shian Wei Mao ,  Chien-Chang Fang

IPC分类号： H01L21/762 ,  H01L21/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/76224 ,  H01L21/02112 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/762 ,  H01L21/76229 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A method of forming a shallow trench isolation (STI) structure in a substrate includes forming a pad oxide layer over the substrate. The method includes forming a nitride-containing layer over the pad oxide layer, wherein the nitride-containing layer has a first thickness. The method further includes forming the STI structure extending through the nitride-containing layer, into the substrate. The STI structure has a height above a top surface of the pad oxide layer. The method includes establishing a correlation between the first thickness, the height of the STI structure above the top surface of the pad oxide layer, and an offset between the first thickness and the height of the STI structure above the top surface of the pad oxide layer. The method includes calculating the height of the STI structure above the pad oxide layer based on the correlation, and selectively removing a determined thickness of the STI structure.

摘要翻译： 在衬底中形成浅沟槽隔离（STI）结构的方法包括在衬底上形成衬垫氧化物层。 该方法包括在衬垫氧化物层上形成含氮化物层，其中含氮化物层具有第一厚度。 该方法还包括形成延伸穿过含氮化物层的STI结构进入衬底。 STI结构具有高于衬垫氧化物层的顶表面的高度。 该方法包括建立第一厚度，衬垫氧化物层的顶表面之上的STI结构的高度与衬垫氧化物层的顶表面之上的STI结构的第一厚度和高度之间的偏移之间的相关性 。 该方法包括基于相关性计算衬垫氧化物层上方的STI结构的高度，并且选择性地去除所确定的STI结构的厚度。

公开(公告)号：US11929283B2

公开(公告)日：2024-03-12

申请号：US16554572

申请日：2019-08-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pin Chi Huang ,  Chien-Chang Fang ,  Rung Hung Hsueh

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/76865 ,  H01L21/0217 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/76832 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device includes a gate structure on a substrate and a dielectric film stack over the gate structure and the substrate, where the dielectric film stack includes a first inter layer dielectric (ILD) over the substrate and the gate structure, a barrier layer over the first ILD, a second ILD over the barrier layer, and a contact extending through the dielectric film stack. An upper portion of a contact sidewall has a first slope, a lower portion of the contact sidewall has a second slope different from the first slope, and a transition from the first slope to the second slope occurs at a portion of the contact extending through the barrier layer.