公开(公告)号：US11714350B2

公开(公告)日：2023-08-01

申请号：US17839266

申请日：2022-06-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Fu Yang ,  Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/82 ,  G03F7/20

CPC classification number: G03F1/82 ,  G03F7/2002

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

公开(公告)号：US12169357B2

公开(公告)日：2024-12-17

申请号：US18210551

申请日：2023-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun-Fu Yang ,  Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/82 ,  G03F7/20

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.