公开(公告)号：US20240274669A1

公开(公告)日：2024-08-15

申请号：US18352847

申请日：2023-07-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： YuYing Hsieh ,  Cheng-Chien Li ,  Huei-Shan Wu

IPC分类号： H01L29/10 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1045 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0869 ,  H01L29/66681 ,  H01L29/7816

摘要： An IC structure includes a semiconductor substrate; an isolation structure formed in the semiconductor substrate, thereby defining active regions surrounded by the isolation feature; a first well of a first conductivity type formed in the semiconductor substrate; a neutral region formed in the semiconductor substrate and laterally surrounding the first well; a second well of a second conductivity type formed on the semiconductor substrate and laterally surrounding the neutral region, the second conductivity type being opposite to the first conductivity type; a source disposed on the second well of the semiconductor substrate; a drain disposed on the first well of the semiconductor substrate; and a gate structure interposed between the source and the drain. The gate structure is engaging the first well, the neutral region and the second well of the semiconductor substrate. The source, the drain and the gate structure are configured as a FET.

公开(公告)号：US11532559B2

公开(公告)日：2022-12-20

申请号：US17184801

申请日：2021-02-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yun-Jhen Liao ,  Huei-Shan Wu ,  Chun-Wei Liao ,  Yi-Lii Huang

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

摘要： A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature. The tungsten barrier layer surrounds the second tungsten contact feature, and is connected to the second tungsten contact feature, the non-cobalt conductive feature and the second dielectric layer.