公开(公告)号：US11532559B2

公开(公告)日：2022-12-20

申请号：US17184801

申请日：2021-02-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yun-Jhen Liao ,  Huei-Shan Wu ,  Chun-Wei Liao ,  Yi-Lii Huang

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

摘要： A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature. The tungsten barrier layer surrounds the second tungsten contact feature, and is connected to the second tungsten contact feature, the non-cobalt conductive feature and the second dielectric layer.

公开(公告)号：US11798800B2

公开(公告)日：2023-10-24

申请号：US17359038

申请日：2021-06-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun-Wei Liao ,  Tung-Hung Feng ,  Hui-Chun Lee ,  Shih-Che Wang

IPC分类号： B08B9/00 ,  B08B3/04 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  G03F1/80

CPC分类号： H01L21/02057 ,  G03F1/80 ,  H01L21/31133 ,  H01L21/6708

摘要： A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

公开(公告)号：US12087580B2

公开(公告)日：2024-09-10

申请号：US17461570

申请日：2021-08-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun-Wei Liao ,  Tung-Hung Feng ,  Hui-Chun Lee

IPC分类号： H01L21/027 ,  G03F7/00 ,  G03F7/11 ,  G03F7/16

CPC分类号： H01L21/0274 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/168

摘要： In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.