公开(公告)号：US12147166B2

公开(公告)日：2024-11-19

申请号：US18210548

申请日：2023-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Ping Yen ,  Yen-Shuo Su ,  Jui-Pin Wu ,  Chun-Lin Chang ,  Han-Lung Chang ,  Heng-Hsin Liu

IPC: G03F7/00

Abstract: An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.

公开(公告)号：US11720035B2

公开(公告)日：2023-08-08

申请号：US17459749

申请日：2021-08-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Ping Yen ,  Yen-Shuo Su ,  Jui-Pin Wu ,  Chun-Lin Chang ,  Han-Lung Chang ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70925 ,  G03F7/70025 ,  G03F7/70033 ,  G03F7/70916 ,  G03F7/70975

Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.