公开(公告)号：US12165873B2

公开(公告)日：2024-12-10

申请号：US17739965

申请日：2022-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： En-Ping Lin ,  Yu-Ling Ko ,  I-Chung Wang ,  Yi-Jen Chen ,  Sheng-Kai Jou ,  Chih-Teng Liao

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/8238

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.