公开(公告)号：US11810945B2

公开(公告)日：2023-11-07

申请号：US17116823

申请日：2020-12-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tao-Cheng Liu ,  Shih-Chi Kuo ,  Tsai-Hao Hung ,  Tsung-Hsien Lee

IPC: H01L21/768 ,  H01L29/94 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L21/76879 ,  H01L27/0805 ,  H01L28/90 ,  H01L29/945

Abstract: A method of making a semiconductor device includes etching a substrate to define a first trench and a second trench. The method further includes depositing a first number M of capacitor layer pairs in the first trench, wherein each of the first number M of capacitor layer pairs includes a first dielectric layer, and a first conductive layer. The method further includes depositing a second number N of capacitor layer pairs in the second trench, wherein the second number N is different from the first number M, and each of the second number N of capacitor layer pairs includes a second dielectric layer, and a second conductive layer. The method further includes planarizing the first number M of capacitor layer pairs and the second number N of capacitor layer pairs to expose the substrate.

公开(公告)号：US10424549B2

公开(公告)日：2019-09-24

申请号：US16173385

申请日：2018-10-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Fu-Chiang Kuo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Ying-Hsun Chen

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/544 ,  H01L21/56 ,  H01L23/29 ,  H01L21/78 ,  H01L23/532 ,  H01L51/52

Abstract: A method of forming a trench structure is provided. The method includes depositing a silicon carbide (SiC) layer on a top metal layer, forming a first passivation layer on the SiC layer, removing a portion of the first passivation layer to form a first opening, forming a second passivation layer on the first passivation layer, the second passivation layer including a first portion in the first opening, and forming a second opening by removing a part of the first portion of the second passivation layer. The forming the second opening exposes the top metal layer.

公开(公告)号：US10115679B1

公开(公告)日：2018-10-30

申请号：US15626681

申请日：2017-06-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Fu-Chiang Kuo ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Ying-Hsun Chen

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/544 ,  H01L21/02 ,  H01L21/56 ,  H01L23/29 ,  H01L23/532 ,  H01L51/52

Abstract: A trench structure includes a top metal layer, a silicon carbide (SiC) layer on the top metal layer, a first passivation layer overlying the SiC layer, and a second passivation layer overlying the first passivation layer. The trench structure also includes a first sidewall and a second sidewall that, together with the top metal layer, form a trench. At least one of the first sidewall or the second sidewall includes a sidewall of the second passivation layer and a sidewall of the SiC layer.