公开(公告)号：US12078856B2

公开(公告)日：2024-09-03

申请号：US17672505

申请日：2022-02-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tao-Cheng Liu ,  Ying-Hsun Chen

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4295 ,  G02B6/4236 ,  G02B6/43

Abstract: A photonic structure is provided. The photonic structure includes a guiding region, a sensing region, and logic region. The guiding region has a first side and a second side opposite to the first side. The sensing region is disposed on the second side of the guiding region. The logic region is disposed on a side of the sensing region opposite to the guiding region. The guiding region, the sensing region, and the logic region are stacked along a vertical direction. A method for manufacturing the photonic structure is also provided.

公开(公告)号：US11810945B2

公开(公告)日：2023-11-07

申请号：US17116823

申请日：2020-12-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tao-Cheng Liu ,  Shih-Chi Kuo ,  Tsai-Hao Hung ,  Tsung-Hsien Lee

IPC: H01L21/768 ,  H01L29/94 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L21/76879 ,  H01L27/0805 ,  H01L28/90 ,  H01L29/945

Abstract: A method of making a semiconductor device includes etching a substrate to define a first trench and a second trench. The method further includes depositing a first number M of capacitor layer pairs in the first trench, wherein each of the first number M of capacitor layer pairs includes a first dielectric layer, and a first conductive layer. The method further includes depositing a second number N of capacitor layer pairs in the second trench, wherein the second number N is different from the first number M, and each of the second number N of capacitor layer pairs includes a second dielectric layer, and a second conductive layer. The method further includes planarizing the first number M of capacitor layer pairs and the second number N of capacitor layer pairs to expose the substrate.

公开(公告)号：US20230326979A1

公开(公告)日：2023-10-12

申请号：US17715900

申请日：2022-04-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tao-Cheng Liu ,  Ying-Hsun Chen

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L21/765

CPC classification number: H01L29/402 ,  H01L29/7816 ,  H01L29/66681 ,  H01L21/765

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed. The method includes forming first and second conductive structures on a semiconductor substrate, forming one or more dielectric layers between the first and second conductive structures, covering the one or more dielectric layers with a first masking layer, forming a first opening in the first masking layer, depositing a conductive material in the first opening to form a field plate structure, and electrically connecting the field plate structure to another conductor.

公开(公告)号：US20220392945A1

公开(公告)日：2022-12-08

申请号：US17883707

申请日：2022-08-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsai-Hao Hung ,  Tao-Cheng Liu ,  Ying-Hsun Chen

IPC: H01L27/146

Abstract: A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.