公开(公告)号：US11756953B2

公开(公告)日：2023-09-12

申请号：US17354870

申请日：2021-06-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Hao Chiang ,  Wun-Jie Lin ,  Jam-Wem Lee

IPC分类号： H01L27/02 ,  H01L29/06

CPC分类号： H01L27/0248 ,  H01L29/0649 ,  H01L29/0692

摘要： A semiconductor device includes a P-doped well having a first concentration of P-type dopants in the substrate; a P-doped region having a second concentration of P-type dopants in the substrate and extending around a perimeter of the P-doped well; a shallow trench isolation structure (STI) between the P-doped well and the P-doped region; an active area on the substrate, the active area including an emitter region and a collector region; a deep trench isolation structure (DTI) extending through the active area and between the emitter region and the collector region; and an electrical connection between the emitter region and the P-doped region.