公开(公告)号：US20230320227A1

公开(公告)日：2023-10-05

申请号：US17707078

申请日：2022-03-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHING-HUI LIN ,  FU-CHUN HUANG ,  CHUN-REN CHENG ,  WEI CHUN WANG ,  CHAO-HUNG CHU ,  YI-HSIEN CHANG ,  PO-CHEN YEH ,  CHI-YUAN SHIH ,  SHIH-FEN HUANG ,  YAN-JIE LIAO ,  SHENG KAI YEH

IPC分类号： H01L41/047 ,  H01L41/083 ,  H01L41/27 ,  H01G5/18

CPC分类号： H01L41/0477 ,  H01G5/18 ,  H01L41/27 ,  H01L41/083

摘要： A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.