公开(公告)号：US11505454B2

公开(公告)日：2022-11-22

申请号：US16583111

申请日：2019-09-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Kang-Che Huang ,  Yi-Chien Wu ,  Shiang-Chi Lin ,  Jung-Huei Peng ,  Chun-Wen Cheng

IPC: B81C1/00

Abstract: A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.