公开(公告)号：US20210202809A1

公开(公告)日：2021-07-01

申请号：US16732222

申请日：2019-12-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHIA-HUA LIN ,  YAO-WEN CHANG ,  CHII-MING WU ,  CHENG-YUAN TSAI ,  EUGENE I-CHUN CHEN ,  TZU-CHUNG TSAI

IPC: H01L33/60 ,  H01L27/15 ,  H01L33/62

Abstract: A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.

公开(公告)号：US20220173290A1

公开(公告)日：2022-06-02

申请号：US17675365

申请日：2022-02-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHIA-HUA LIN ,  YAO-WEN CHANG ,  CHII-MING WU ,  CHENG-YUAN TSAI ,  EUGENE I-CHUN CHEN ,  TZU-CHUNG TSAI

IPC: H01L33/60 ,  H01L33/62 ,  H01L27/15

Abstract: A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.