公开(公告)号：US12114511B2

公开(公告)日：2024-10-08

申请号：US17462577

申请日：2021-08-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hui-Hsien Wei ,  Yen-Chung Ho ,  Chia-Jung Yu ,  Yong-Jie Wu ,  Pin-Cheng Hsu

IPC分类号： H01L29/82 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

CPC分类号： H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

摘要： A semiconductor device, an integrated circuit, and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a thin-film transistor (TFT) over the substrate, and a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT. The TFT includes a gate electrode; a gate dielectric layer disposed over the gate electrode; source/drain electrodes disposed above the gate electrode; and an active layer disposed above the gate electrode. A protection layer is disposed between the TFT and the MRAM cell and electrically connects the MRAM cell to the TFT.