公开(公告)号：US20170033765A1

公开(公告)日：2017-02-02

申请号：US15217105

申请日：2016-07-22

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Akira MORIYA ,  Osamu KAWACHI

IPC: H03H9/02 ,  H03H9/145 ,  H03H9/64

CPC classification number: H03H9/02574 ,  H03H9/6403

Abstract: An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded on an upper surface of the support substrate at room temperature and made of a different material from the support substrate; a comb-shaped electrode formed on an upper surface of the piezoelectric substrate and exciting an acoustic wave; and an amorphous layer formed between the support substrate and the piezoelectric substrate.

Abstract translation: 声波装置包括：支撑基板; 压电基板，其在室温下接合在支撑基板的上表面上，并由与支撑基板不同的材料制成; 形成在压电基板的上表面上并激发声波的梳状电极; 以及形成在所述支撑基板和所述压电基板之间的非晶层。

公开(公告)号：US20140354114A1

公开(公告)日：2014-12-04

申请号：US14290746

申请日：2014-05-29

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Akira MORIYA ,  Osamu KAWACHI

IPC: H03H9/10 ,  H03H3/02 ,  B06B1/06

CPC classification number: B06B1/0662 ,  H03H3/08 ,  H03H9/0547 ,  H03H9/1071 ,  Y10T29/42

Abstract: An acoustic wave device includes: a support substrate; a piezoelectric substrate; and a cap substrate, wherein the cap substrate includes a first region located along an outer peripheral portion of the cap substrate, a second region located along an inside of the first region and having a thickness less than a thickness of the first region, and a third region located inside the second region and having a thickness less than a thickness of the second region, and a surface of the first region is bonded to the surface of the outer peripheral portion of the support substrate, a surface of the second region is bonded to a surface of an outer peripheral portion of the piezoelectric substrate, and a surface of the third region is located away from a surface of the piezoelectric substrate to form a space for the excitation electrode to vibrate.

Abstract translation: 声波装置包括：支撑基板; 压电基板; 以及盖基板，其中所述盖基板包括沿着所述盖基板的外周部分定位的第一区域，沿着所述第一区域的内侧设置并且具有小于所述第一区域的厚度的厚度的第二区域，以及 第三区域，其位于第二区域的内部，其厚度小于第二区域的厚度，第一区域的表面接合到支撑基板的外周部的表面，第二区域的表面被接合 到压电基板的外周部的表面，并且第三区域的表面位于远离压电基板的表面的位置，以形成用于激发电极振动的空间。

公开(公告)号：US20140009247A1

公开(公告)日：2014-01-09

申请号：US13924118

申请日：2013-06-21

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Akira MORIYA

IPC: H03H9/72

CPC classification number: H03H9/725

Abstract: A duplexer includes: a transmission filter connected between a common terminal and a transmission terminal; and a reception filter connected between the common terminal and a reception terminal, wherein the reception filter includes resonators located on a piezoelectric substrate, at least one resonator of the resonators is grounded, and a resonator located at a side closest to the common terminal out of the grounded resonator is a divided resonator that is divided into two or more, and a resonance frequency fr of the divided resonator is in a range of fr=2×(fTL to fTH)−(fRL to fRH) when a pass frequency of the transmission filter is fTL to fTH and a pass frequency of the reception filter is fRL to fRH.

Abstract translation: 双工器包括：连接在公共终端和传输终端之间的传输滤波器; 连接在公共端子和接收端子之间的接收滤波器，其中，所述接收滤波器包括位于压电基板上的谐振器，所述谐振器的至少一个谐振器被接地，并且位于最靠近所述公共端子的一侧的谐振器不在 接地谐振器是被划分为两个或更多个的分频谐振器，并且当通过频率fr时，分频谐振器的谐振频率fr在fr = 2×（fTL至fTH） - （fRL至fRH）的范围内 发送滤波器是fTL到fTH，接收滤波器的通过频率为fRL到fRH。