公开(公告)号：US11355478B2

公开(公告)日：2022-06-07

申请号：US16615276

申请日：2019-07-18

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wei Zhang ,  Macai Lu ,  Minggang Liu ,  Chunche Hsu ,  Chiayu Lee

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.