公开(公告)号：US11289543B2

公开(公告)日：2022-03-29

申请号：US16627352

申请日：2019-12-23

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Huafei Xie ,  Shujhih Chen ,  Chiayu Lee

IPC: H01L29/06 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

Abstract: A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

公开(公告)号：US11217489B1

公开(公告)日：2022-01-04

申请号：US16758051

申请日：2020-01-07

Applicant: TCL China Star Optoelectronics Technology Co., Ltd.

Inventor： Huafei Xie ,  Shujhih Chen ,  Chiayu Lee

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L27/28 ,  H01L51/00

Abstract: The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

公开(公告)号：US11355478B2

公开(公告)日：2022-06-07

申请号：US16615276

申请日：2019-07-18

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wei Zhang ,  Macai Lu ,  Minggang Liu ,  Chunche Hsu ,  Chiayu Lee

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.

公开(公告)号：US20210398952A1

公开(公告)日：2021-12-23

申请号：US16615276

申请日：2019-07-18

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wei ZHANG ,  Macai LU ,  Minggang LIU ,  Chunche HSU ,  Chiayu Lee

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.