公开(公告)号：US20240047537A1

公开(公告)日：2024-02-08

申请号：US17611118

申请日：2021-09-29

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Macai Lu ,  Minggang Liu ,  Nian Liu

IPC: H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L29/7869 ,  G02F1/1368 ,  G02F1/136286 ,  H01L29/6675

Abstract: A thin-film transistor (TFT), a display panel, and a manufacturing method of the display panel are provided. The TFT includes: a gate, a gate insulating layer, an active layer, a first electrode, an interlayer insulating layer, and a second electrode. The interlayer insulating layer is disposed between the first electrode and the active layer. A first via is defined on the interlayer insulating layer. The active layer is connected to the first electrode by the first via. A thickness of the interlayer insulating layer is greater than a thickness of the gate insulating layer. The second electrode is connected to the active layer.

公开(公告)号：US20240038784A1

公开(公告)日：2024-02-01

申请号：US17622801

申请日：2021-12-16

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Macai Lu ,  Jiangbo Yao

IPC: H01L27/12 ,  H01L25/16

CPC classification number: H01L27/1255 ,  H01L25/167 ,  H01L27/1259

Abstract: An embodiment of the present application discloses a display panel manufacturing method and a display panel including a driver transistor, a storage capacitor, a switch transistor, and a sensing transistor vertically stacked. At leas two transistors are vertically stacked to solve a technical issue that a pixel in a conventional display panel employs a pixel circuit design of transistors and capacitors arranged along a direction parallel to the display panel to cause a lowered pixel density of the display panel to result in a lowered resolution of a display panel product.

公开(公告)号：US11355478B2

公开(公告)日：2022-06-07

申请号：US16615276

申请日：2019-07-18

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wei Zhang ,  Macai Lu ,  Minggang Liu ,  Chunche Hsu ,  Chiayu Lee

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.