公开(公告)号：US20240047537A1

公开(公告)日：2024-02-08

申请号：US17611118

申请日：2021-09-29

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Macai Lu ,  Minggang Liu ,  Nian Liu

IPC: H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L29/7869 ,  G02F1/1368 ,  G02F1/136286 ,  H01L29/6675

Abstract: A thin-film transistor (TFT), a display panel, and a manufacturing method of the display panel are provided. The TFT includes: a gate, a gate insulating layer, an active layer, a first electrode, an interlayer insulating layer, and a second electrode. The interlayer insulating layer is disposed between the first electrode and the active layer. A first via is defined on the interlayer insulating layer. The active layer is connected to the first electrode by the first via. A thickness of the interlayer insulating layer is greater than a thickness of the gate insulating layer. The second electrode is connected to the active layer.