Magnetic sensor
    1.
    发明授权

    公开(公告)号:US11892527B2

    公开(公告)日:2024-02-06

    申请号:US17947719

    申请日:2022-09-19

    CPC classification number: G01R33/098 G01R33/093

    Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

    Magnetic sensor
    2.
    发明授权

    公开(公告)号:US12044754B2

    公开(公告)日:2024-07-23

    申请号:US17947770

    申请日:2022-09-19

    CPC classification number: G01R33/093

    Abstract: A magnetic sensor includes a substrate including a top surface, an insulating layer including an inclined surface, an MR element disposed on the inclined surface, a first insulating portion of an insulating material disposed on a part of the MR element, and a second insulating portion of an insulating material disposed on another part of the MR element at a position forward of the first insulating portion in a direction along the inclined surface, the direction being a direction away from the top surface of the substrate.

    Magnetic sensor
    3.
    发明授权

    公开(公告)号:US11874346B2

    公开(公告)日:2024-01-16

    申请号:US17947735

    申请日:2022-09-19

    CPC classification number: G01R33/093 G01R33/0005 G01R33/098

    Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.

    Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall
    4.
    发明授权
    Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall 有权
    磁阻元件包括具有侧壁的叠层和与侧壁接触的绝缘层

    公开(公告)号:US09502056B1

    公开(公告)日:2016-11-22

    申请号:US15082992

    申请日:2016-03-28

    Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

    Abstract translation: TMR元件包括具有侧壁的堆叠以及与侧壁接触的绝缘层。 堆叠包括第一铁磁层,第二铁磁层和位于第一和第二铁磁层之间的隧道势垒层。 绝缘层包括仅与侧壁的一部分接触的岛状结构部分和覆盖岛状结构部分和侧壁的涂覆部分。 隧道势垒层含有第一氧化物。 岛状结构部分包含第二氧化物。 第一和第二氧化物中的每一个都是金属氧化物或半导体氧化物。 G2-G1为435kJ / mol以下,其中G1和G2分别为第一氧化物和第二氧化物在280℃下形成的标准吉布斯能量。

    Magnetic sensor including magnetic detection element disposed on inclined surface

    公开(公告)号:US12248040B2

    公开(公告)日:2025-03-11

    申请号:US18391819

    申请日:2023-12-21

    Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

    Magnetic sensor including magnetic detection element including bottom surface facing inclined surface

    公开(公告)号:US12235333B2

    公开(公告)日:2025-02-25

    申请号:US18524172

    申请日:2023-11-30

    Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.

    Magneto-resistive effect element having side shield integrated with upper shield

    公开(公告)号:US09747933B1

    公开(公告)日:2017-08-29

    申请号:US15044559

    申请日:2016-02-16

    CPC classification number: G11B5/3912 G11B2005/3996

    Abstract: A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.

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